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參數(shù)資料
| 型號(hào)： | IRFS830A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Power MOSFET（500V，1.5Ω，3.1A）(N溝道功率MOS場效應(yīng)管（漏源電壓500V，導(dǎo)通電阻1.5Ω，漏電流3.1A）) |
| 中文描述： | 3.1 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-220F, 3 PIN |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 255K |
| 代理商： | IRFS830A |
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10 A (Max.) @ V
DS
= 500V
Lower R
DS(ON)
: 1.169 (Typ.)
Advanced Power MOSFET
Thermal Resistance
Junction-to-Case
Junction-to-Ambient
R
JC
R
JA
Characteristic
Max.
Units
Symbol
Typ.
FEATURES
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25 )
Continuous Drain Current (T
C
=100 C
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
C
=25 C
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 “ from case for 5-seconds
Characteristic
Value
500
3.1
2
18
+
_
Units
V
Symbol
V
DSS
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
I
D
P
D
T
J
, T
STG
T
L
A
V
mJ
A
mJ
V/ns
W
W/
o
C
A
TO-220F
1.Gate 2. Drain 3. Source
3
2
1
IRFS830A
BV
DSS
= 500 V
R
DS(on)
= 1.5
I
D
= 3.1 A
374
3.1
3.8
3.5
38
0.3
- 55 to +150
300
3.31
62.5
--
--
30
O
1
O
O
1
O
1
2
O
3
C
o
C
o
C/W
1999 Fairchild Semiconductor Corporation
Rev. B
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PDF描述 |
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| IRFS840A | N-Channel Power MOSFET（500V，0.85Ω，4.6A）(N溝道功率MOS場效應(yīng)管（漏源電壓500V，導(dǎo)通電阻0.85Ω，漏電流4.6A）) |
| IRFS840 | 500V N-Channel MOSFET |
| IRFS840B | 500V N-Channel MOSFET |
| IRFS9630 | Advanced Power MOSFET |
| IRFSZ24A | N-Channel Power MOSFET（60V，0.07Ω，14A）(N溝道功率MOS場效應(yīng)管（漏源電壓60V，導(dǎo)通電阻0.07Ω，漏電流14A）) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFS830B | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFS830BT | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFS831 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 3A I(D) | TO-220VAR |
| IRFS832 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 2.5A I(D) | TO-220VAR |
| IRFS833 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 2.5A I(D) | TO-220VAR |
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