- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄379240 > IRFS830A (FAIRCHILD SEMICONDUCTOR CORP) N-Channel Power MOSFET（500V，1.5Ω，3.1A）(N溝道功率MOS場效應(yīng)管（漏源電壓500V，導(dǎo)通電阻1.5Ω，漏電流3.1A）) PDF資料下載
參數(shù)資料
| 型號： | IRFS830A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Power MOSFET（500V，1.5Ω，3.1A）(N溝道功率MOS場效應(yīng)管（漏源電壓500V，導(dǎo)通電阻1.5Ω，漏電流3.1A）) |
| 中文描述： | 3.1 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-220F, 3 PIN |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 255K |
| 代理商： | IRFS830A |
N-C HANNEL
POWER MOSFET
Electrical Characteristics
(T
C
=25 unless otherwise specified)
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Characteristic
Symbol
BV
DSS
BV/ T
J
V
GS(th)
Max. Units
Typ.
Min.
Test Condition
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain(“Miller”) Charge
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
R
DS(on)
I
GSS
I
DSS
V
V
nA
A
μ
pF
ns
nC
--
--
--
--
--
--
--
--
--
--
--
--
--
V
GS
=0V,I
D
=250 A
I
D
=250 A
See Fig 7
V
DS
=5V,I
D
=250 A
V
GS
=30V
V
GS
=-30V
V
DS
=500V
V
DS
=400V,T
C
=125
V
GS
=10V,I
D
=1.55A
V
DS
=50V,I
D
=1.55A
V
DD
=250V,I
D
=4.5A,
R
G
=12
See Fig 13
V
DS
=400V,V
GS
=10V,
I
D
=4.5A
See Fig 6 & Fig 12
Drain-to-Source Leakage Current
V
GS
=0V,V
DS
=25V,f =1MHz
See Fig 5
Source-Drain Diode Ratings and Characteristics
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
Q
rr
Characteristic
Symbol
Max. Units
Typ.
Min.
Test Condition
--
--
--
--
--
A
V
ns
C
μ
Integral reverse pn-diode
in the MOSFET
T
J
=25 ,I
S
=3.1A,V
GS
=0V
T
J
=25 ,I
F
=4.5A
di
F
/dt=100A/ s
IRFS830A
500
--
2.0
--
--
--
--
--
0.61
--
--
--
--
--
85
38
15
16
66
22
33
4.4
16.6
--
--
4.0
100
-100
10
100
1.5
--
900
100
45
40
40
140
55
43
--
--
4.42
690
--
--
--
285
2.0
3.1
18
1.4
--
--
Notes ;
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
L=70mH, I
AS
=3.1A, V
DD
=50V, R
G
=27 , Starting T
J
=25
I
SD
4.5A, di/dt 130A/ s, V
DD
BV
DSS
, Starting T
J
=25
Pulse Test : Pulse Width = 250 s, Duty Cycle 2%
Essentially Independent of Operating Temperature
O
5
O
1
O
O
3
O
2
4
C
V/
o
C
o
C
o
C
O
1
O
4
O
4
C
C
O
4
O
4
O
5
O
4
O
4
O
5
o
C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRFS840A | N-Channel Power MOSFET（500V，0.85Ω，4.6A）(N溝道功率MOS場效應(yīng)管（漏源電壓500V，導(dǎo)通電阻0.85Ω，漏電流4.6A）) |
| IRFS840 | 500V N-Channel MOSFET |
| IRFS840B | 500V N-Channel MOSFET |
| IRFS9630 | Advanced Power MOSFET |
| IRFSZ24A | N-Channel Power MOSFET（60V，0.07Ω，14A）(N溝道功率MOS場效應(yīng)管（漏源電壓60V，導(dǎo)通電阻0.07Ω，漏電流14A）) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFS830B | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFS830BT | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFS831 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 3A I(D) | TO-220VAR |
| IRFS832 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 2.5A I(D) | TO-220VAR |
| IRFS833 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 2.5A I(D) | TO-220VAR |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。