參數(shù)資料
型號(hào): IRFU220
廠商: INTERSIL CORP
元件分類: 功率晶體管
英文描述: 4.6A, 200V, 0.800 Ohm, N-Channel Power MOSFETs
中文描述: 4.6 A, 200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
文件頁數(shù): 3/7頁
文件大?。?/td> 55K
代理商: IRFU220
4-391
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Continuous Source to Drain Current
I
SD
I
SDM
Modified MOSFET Sym-
bol Showing the Integral
Reverse P-N Junction
Rectifier
-
-
4.6
A
Pulse Source to Drain Current (Note 3)
-
-
18
A
Source to Drain Diode Voltage (Note 2)
V
SD
t
rr
Q
RR
T
J
= 25
o
C, I
SD
= 4.6A, V
GS
= 0V, (Figure 13)
T
J
= 25
o
C, I
SD
= 4.6A, dI
SD
/dt = 100A/
μ
s
T
J
= 25
o
C, I
SD
= 4.6A, dI
SD
/dt = 100A/
μ
s
-
-
1.8
V
Reverse Recovery Time
69
170
400
ns
Reverse Recovery Charge
0.30
0.72
1.8
μ
C
NOTES:
2. Pulse test: pulse width
300
μ
s, duty cycle
2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V
DD
= 10V, starting T
J
= 25
o
C, L = 6.18mH, R
G
= 50
,
peak I
AS
= 4.6A.
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
G
D
S
0
50
100
150
0
T
C
, CASE TEMPERATURE (
o
C)
P
0.2
0.4
0.6
0.8
1.0
1.2
0
50
100
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
150
25
75
125
5
4
3
2
1
1
0.1
10
-2
10
-5
10
-4
10
-3
10
-2
0.1
1
10
Z
θ
J
,
T
t
1
, RECTANGULAR PULSE DURATION (S)
SINGLE PULSE
P
DM
NOTES:
DUTY FACTOR: D = t
1
/t
PEAK T
J
= P
DM
x Z
θ
JC
+ T
C
t
1
t
2
0.1
0.05
0.02
0.01
0.2
0.5
10
IRFR220, IRFU220
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