參數(shù)資料
型號: IRFU220N
廠商: International Rectifier
英文描述: Power MOSFET(Vdss=200V, Rds(on)max=600mohm, Id=5.0A)
中文描述: 功率MOSFET(減振鋼板基本\u003d 200V的電壓,的Rds(on)最大值\u003d 600mohm,身份證\u003d 5.0a中)
文件頁數(shù): 4/10頁
文件大?。?/td> 132K
代理商: IRFU220N
IRFR/U220N
4
www.irf.com
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
0
5
Q , Total Gate Charge (nC)
10
15
20
25
0
4
8
12
16
20
V
G
I =
SEE FIGURE
FOR TEST CIRCUIT
13
2.9A
V
= 40V
DS
V
= 100V
DS
V
= 160V
DS
0.1
1
10
100
0.4
0.6
0.8
1.0
1.2
V ,Source-to-Drain Voltage (V)
I
S
V = 0 V
T = 25 C
°
T = 175 C
°
0.1
1
10
100
1
10
100
1000
BY R
DS(on)
OPERATION IN THIS AREA LIMITED
Single Pulse
T
T
= 175°
= 25°
J
C
V , Drain-to-Source Voltage (V)
D
I
10us
100us
1ms
10ms
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
10000
C
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
相關PDF資料
PDF描述
IRFR220NTR TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 5A I(D) | TO-252AA
IRFR220NTRL TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 5A I(D) | TO-252AA
IRFR220NTRR TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 5A I(D) | TO-252AA
IRFR224 Power MOSFET(Vdss=250V, Rds(on)=1.1ohm, Id=3.8A)
IRFU224 Power MOSFET(Vdss=250V, Rds(on)=1.1ohm, Id=3.8A)
相關代理商/技術參數(shù)
參數(shù)描述
IRFU220NPBF 功能描述:MOSFET MOSFT 200V 5A 600mOhm 15nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFU220PBF 功能描述:MOSFET N-Chan 200V 4.8 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFU220S2497 制造商:Rochester Electronics LLC 功能描述:- Bulk
IRFU221 制造商:Rochester Electronics LLC 功能描述:- Bulk
IRFU222 制造商:Rochester Electronics LLC 功能描述:- Bulk