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參數(shù)資料
| 型號： | IRFU3711 |
| 廠商： | International Rectifier |
| 英文描述： | RES 475-OHM 1% 0.25W 100PPM THICK-FILM SMD-1206 5K/REEL-7IN-PA |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 20V的，的Rds（on）最大值\u003d 6.5mohm，身份證\u003d已廢除） |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 239K |
| 代理商： | IRFU3711 |
www.irf.com
1
2/7/01
IRFR3711
IRFU3711
SMPS MOSFET
HEXFET
Power MOSFET
R
DS(on)
max
6.5m
V
DSS
20V
I
D
110A
Notes
through
are on page 10
D-Pak I-Pak
IRFR3711 IRFU3711
Absolute Maximum Ratings
Symbol
V
DS
V
GS
Gate-to-Source Voltage
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
P
D
@T
A
= 25°C
Maximum Power Dissipation
P
D
@T
C
= 25°C
Maximum Power Dissipation
Linear Derating Factor 0.96 mW/°C
T
J
, T
STG
Junction and Storage Temperature Range
Parameter
Max.
20
Units
V
Drain-Source Voltage
± 20 V
110
69
440
2.5
120
A
W
W
-55 to + 150
°C
Parameter
Typ.
–––
–––
–––
Max.
1.04
50
110
Units
R
θ
JC
R
θ
JA
R
θ
JA
Junction-to-Case
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
°C/W
Thermal Resistance
Applications
l
High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l
High Frequency Buck Converters for
Server Processor Power Synchronous FET
l
Optimized for Synchronous Buck
Converters Including Capacitive Induced
Turn-on Immunity
Benefits
l
Ultra-Low Gate Impedance
l
Very Low RDS(on) at 4.5V V
GS
l
Fully Characterized Avalanche Voltage
and Current
PD- 94061
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRFR3711 | Power MOSFET(Vdss=20V, Rds(on)max=6.5mohm, Id=110A) |
| IRFR3711TR | TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 110A I(D) | TO-252AA |
| IRFR3711TRL | TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 110A I(D) | TO-252AA |
| IRFR3711TRR | TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 110A I(D) | TO-252AA |
| IRFU9110 | RES 4.75K-OHM 1% 0.25W 100PPM THICK-FILM SMD-1206 5K/REEL-7IN-PA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFU3711PBF | 功能描述:MOSFET 20V 1 N-CH HEXFET 6.5mOhms 29nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFU3711Z | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFET Power MOSFET |
| IRFU3711ZCPBF | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFET Power MOSFET |
| IRFU3711ZPBF | 功能描述:MOSFET MOSFT 20V 93A 5.7mOhm 18nC Qg RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFU3711ZPBF | 制造商:International Rectifier 功能描述:MOSFET |
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