參數(shù)資料
型號: IRFU3711
廠商: International Rectifier
英文描述: RES 475-OHM 1% 0.25W 100PPM THICK-FILM SMD-1206 5K/REEL-7IN-PA
中文描述: 功率MOSFET(減振鋼板基本\u003d 20V的,的Rds(on)最大值\u003d 6.5mohm,身份證\u003d已廢除)
文件頁數(shù): 7/10頁
文件大?。?/td> 239K
代理商: IRFU3711
IRFR/U3711
www.irf.com
7
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
5%
Body Diode
Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D =
P.W.
Period
+
-
+
+
+
-
-
-
Fig 14.
For N-Channel HEXFET
Power MOSFETs
*
V
GS
= 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
R
G
V
DD
dv/dt controlled by R
G
Driver same type as D.U.T.
I
SD
controlled by Duty Factor "D"
D.U.T. - Device Under Test
D.U.T
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
*
相關(guān)PDF資料
PDF描述
IRFR3711 Power MOSFET(Vdss=20V, Rds(on)max=6.5mohm, Id=110A)
IRFR3711TR TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 110A I(D) | TO-252AA
IRFR3711TRL TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 110A I(D) | TO-252AA
IRFR3711TRR TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 110A I(D) | TO-252AA
IRFU9110 RES 4.75K-OHM 1% 0.25W 100PPM THICK-FILM SMD-1206 5K/REEL-7IN-PA
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRFU3711PBF 功能描述:MOSFET 20V 1 N-CH HEXFET 6.5mOhms 29nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFU3711Z 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFET Power MOSFET
IRFU3711ZCPBF 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFET Power MOSFET
IRFU3711ZPBF 功能描述:MOSFET MOSFT 20V 93A 5.7mOhm 18nC Qg RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFU3711ZPBF 制造商:International Rectifier 功能描述:MOSFET