參數(shù)資料
型號(hào): IRFU420
廠商: HARRIS SEMICONDUCTOR
元件分類(lèi): 功率晶體管
英文描述: 2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFETs
中文描述: 2.5 A, 500 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
文件頁(yè)數(shù): 4/7頁(yè)
文件大?。?/td> 55K
代理商: IRFU420
4-410
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
I
D
,
-100
1.0
-10
-1
0.1
-1000
BY r
DS(ON)
AREA IS LIMITED
100
μ
s
1ms
10ms
SINGLE PULSE
T
= MAX RATED
I
D
,
0
50
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
100
150
200
1
2
3
4
5
250
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0
V
GS
= 10V
V
GS
= 4.5V
V
GS
= 4.0V
V
GS
= 5.0V
V
GS
= 5.5V
V
GS
= 6.0V
0
1
0
4
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
8
12
20
2
3
I
D
,
4
16
5
V
GS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 4.5V
V
GS
= 5.5V
V
GS
= 6.0V
V
GS
= 5.0V
V
GS
4.0V
0
2
V
GS
, GATE TO SOURCE VOLTAGE (V)
4
6
8
10
1
0.1
10
-2
I
D
,
T
J
= 150
o
C
T
J
= 25
o
C
10
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DS
50V
I
D
, DRAIN CURRENT (A)
r
D
,
10
8
6
4
2
00
2
4
6
8
10
V
GS
= 20V
V
GS
= 10V
O
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
N
3.0
1.8
1.2
0.6
0
-40
0
40
T
J
, JUNCTION TEMPERATURE (
o
C)
120
2.4
80
160
O
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 10V, I
D
= 1.3A
IRFR420, IRFU420
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