參數(shù)資料
型號： IRFU9210N
廠商： International Rectifier
英文描述： HEXFET Power MOSFET
中文描述： HEXFET功率MOSFET
文件頁數(shù)： 2/10頁
文件大?。?/td> 117K
代理商： IRFU9210N
IRFR/U9120N
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= -3.9A, V
GS
= 0V
T
J
= 25°C, I
F
= -4.0A
di/dt = 100A/μs
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
–––
100
420
-1.6
150
630
V
ns
nC
-6.6
-26
A
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
This is applied for I-PAK, L
S
of D-PAK is measured between
lead and center of die contact
Starting T
J
= 25°C, L = 13mH
R
G
= 25
, I
AS
= -3.9A. (See Figure 12)
I
SD
≤
-4.0A, di/dt
≤
300A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
Pulse width
≤
300μs; duty cycle
≤
2%.
S
D
G
Parameter
Min. Typ. Max. Units
-100
–––
–––
-0.11 –––
–––
–––
-2.0
–––
1.4
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
14
–––
47
–––
28
–––
31
Conditions
V
GS
= 0V, I
D
= -250μA
Reference to 25°C, I
D
= -1mA
V
GS
= -10V, I
D
= -3.9A
V
DS
= V
GS
, I
D
= -250μA
V
DS
= -50V, I
D
= -4.0A
V
DS
= -100V, V
GS
= 0V
V
DS
= -80V, V
GS
= 0V, T
J
= 150°C
V
GS
= 20V
V
GS
= -20V
I
D
= -4.0A
V
DS
= -80V
V
GS
= -10V, See Fig. 6 and 13
V
DD
= -50V
I
D
= -4.0A
R
G
=
12
R
D
=12
,
See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= -25V
= 1.0MHz, See Fig. 5
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
Drain-to-Source Breakdown Voltage
–––
V
V/°C
V
S
0.48
-4.0
–––
-25
-250
100
-100
27
5.0
15
–––
–––
–––
–––
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
–––
–––
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
350
110
70
–––
–––
–––
pF
nH
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance
–––
–––
I
GSS
ns
4.5
7.5
I
DSS
Drain-to-Source Leakage Current
S
D
G
Uses IRF9520N data and test conditions.
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PDF描述
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IRFR9210 Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-1.9A)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRFU9210PBF 功能描述:MOSFET P-Chan 200V 1.9 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFU9211 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 2A I(D) | TO-251AA
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