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參數(shù)資料
| 型號： | IRG4BC40MD |
| 廠商： | International Rectifier |
| 英文描述： | Fit Rate / Equivalent Device Hours |
| 中文描述： | FIT率/等效器件小時 |
| 文件頁數(shù)： | 24/35頁 |
| 文件大?。?/td> | 112K |
| 代理商： | IRG4BC40MD |
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HIGH TEMPERATURE REVERSE BIAS (HTRB)
Test circuit
Conditions
Bias:
Temperature:
Duration:
Test points:
Vce = As required
Tmax
2000 Hours nominal
168, 500, 1000,
1500, 2000, Hours nominal
DUT
DC
BIAS
D
= Diode for CoPack devices only
Purpose
Failure Modes
Sensitive Parameters
V
(BR)CES,
I
CES,
I
GES,
V
GE(th)
High temperature reverse bias (HTRB) burn-in is to stress the devices with the
applied voltage in the blocking mode while elevating the junction temperature. This
will accelerate any blocking voltage degradation process.
D
The primary failure mode for HTRB stress is a gradual degradation of the breakdown
characteristics or
V
(BR)CES
. This degradation has been attributed to the presence of
foreign materials and polar/ionic contaminants. These materials, migrating under
application of electric field at high temperature, can perturb the electric field
termination structure.
Extreme care must be exercised in the course of a long term test to avoid potential
hazards such as electrostatic discharge or electrical overstress to the gate during
test. Failures arising from this abuse can be virtually indistinguishable from true
HTRB failures which results from the actual stress test.
IGBT / CoPack
Quarterly Reliability Report
Page 24 of 35
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PDF描述 |
|---|---|
| IRG4BC40SD | Fit Rate / Equivalent Device Hours |
| IRG4BC40UD | Fit Rate / Equivalent Device Hours |
| IRG4BE40FD | Fit Rate / Equivalent Device Hours |
| IRG4BE40KD | Fit Rate / Equivalent Device Hours |
| IRG4BE40MD | Fit Rate / Equivalent Device Hours |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRG4BC40S | 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.32V, @Vge=15V, Ic=31A) |
| IRG4BC40SD | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Fit Rate / Equivalent Device Hours |
| IRG4BC40SPBF | 功能描述:IGBT 晶體管 600V DC-1 KHZ (STD) DISCRETE IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IRG4BC40S-S | 制造商:International Rectifier 功能描述:600V 60.000A D2PAK / IGBT : JA / DISCRET |
| IRG4BC40U | 功能描述:IGBT UFAST 600V 40A TO-220AB RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:- 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
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