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參數(shù)資料
| 型號： | IRG4BC40SD |
| 廠商： | International Rectifier |
| 英文描述： | Fit Rate / Equivalent Device Hours |
| 中文描述： | FIT率/等效器件小時 |
| 文件頁數(shù)： | 25/35頁 |
| 文件大?。?/td> | 112K |
| 代理商： | IRG4BC40SD |
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HIGH TEMPERATURE GATE BIAS (HTGB)
Test circuit
Conditions
DUT
Bias:
Temperature:
Duration:
Test points:
Vge = As required
Tmax
2000 Hours nominal
168, 500, 1000,
1500, 2000 Hours nominal.
DC
BIAS
D
= Diode for CoPack devices only
Purpose
Failure Modes
Sensitive Parameters
I
CES,
V
GE(th)
The purpose of High Temperature Gate Bias is to stress the devices with the
applied bias to the gate while at elevated junction temperature to accelerate time
dependent dielectric breakdown of the gate structure.
D
The primary failure modes for long term gate stress is a rupture of the gate oxide,
causing either a resistive short between gate-to-emitter or gate-to-collector or what
appears to be a low breakdown diode between the gate and source.
The oxide breakdown has been attributed to the degradation in time of existing
defects in the thermally grown oxide. These defects can take form of localized
thickness
variations,
structural
anomalies
particulate, within the oxide.
or
the
presence
of
sub-micron
As with HTRB, extreme care must be exercised in the course of a long term test to
avoid potential hazards such as electrostatic discharge or electrical overstress to
the gate during test. Failures arising from this abuse are virtually indistinguishable
from true oxide breakdown which result from the actual stress test.
IGBT / CoPack
Quarterly Reliability Report
Page 25 of 35
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRG4BC40UD | Fit Rate / Equivalent Device Hours |
| IRG4BE40FD | Fit Rate / Equivalent Device Hours |
| IRG4BE40KD | Fit Rate / Equivalent Device Hours |
| IRG4BE40MD | Fit Rate / Equivalent Device Hours |
| IRG4BE40SD | Fit Rate / Equivalent Device Hours |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRG4BC40SPBF | 功能描述:IGBT 晶體管 600V DC-1 KHZ (STD) DISCRETE IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IRG4BC40S-S | 制造商:International Rectifier 功能描述:600V 60.000A D2PAK / IGBT : JA / DISCRET |
| IRG4BC40U | 功能描述:IGBT UFAST 600V 40A TO-220AB RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:- 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
| IRG4BC40UD | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Fit Rate / Equivalent Device Hours |
| IRG4BC40UPBF | 功能描述:IGBT 晶體管 600V UltraFast 8-60kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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