參數資料
型號： IRG4BC40SD
廠商： International Rectifier
英文描述： Fit Rate / Equivalent Device Hours
中文描述： FIT率/等效器件小時
文件頁數： 6/35頁
文件大小： 112K
代理商： IRG4BC40SD
Using IGBT Reliability Information
Classic Bathtub Curve for failure rate of solid state devices
λ
( t )
Infant
Failures
Wearout
Failures
Random Failures
Log Time
Reliability is the probability that a semiconductor device will perform its
specified function in a given environment for a specified period of time.
Reliability is quality over time & environmental conditions.
Reliability can be defined as a probability of failure-free performance of a
required function, under a specified environment, for a given period of time.
The reliability of semiconductors has been extensively studied and the data
generated from these works is widely used in industry to estimate the
probabilities of system lifetimes. The reliability of a specific semiconductor
device is unique to the technology process used in fabrication and to the
external stress applied to the device.
In order to understand the reliability of specific product like the IGBT it is
useful to determine the failure rate associated with each environmental stress
that IGBT's encounter.
The values reported in this report are at a 60% upper confidence limit and the
equivalent device hours at state of working temperature of 90°C. It has been
shown that the failure rate of semiconductors in general. when followed for a
long period of time, exhibits what has been called a "Bathtub Curve" when
plotted against time for a given set of environmental conditions.
t
L
IGBT / CoPack
Quarterly Reliability Report
Page 6 of 35
相關PDF資料
PDF描述
IRG4BC40UD Fit Rate / Equivalent Device Hours
IRG4BE40FD Fit Rate / Equivalent Device Hours
IRG4BE40KD Fit Rate / Equivalent Device Hours
IRG4BE40MD Fit Rate / Equivalent Device Hours
IRG4BE40SD Fit Rate / Equivalent Device Hours
相關代理商/技術參數
參數描述
IRG4BC40SPBF 功能描述:IGBT 晶體管 600V DC-1 KHZ (STD) DISCRETE IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IRG4BC40S-S 制造商:International Rectifier 功能描述:600V 60.000A D2PAK / IGBT : JA / DISCRET
IRG4BC40U 功能描述:IGBT UFAST 600V 40A TO-220AB RoHS:否 類別:分離式半導體產品 >> IGBT - 單路 系列:- 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件
IRG4BC40UD 制造商:IRF 制造商全稱:International Rectifier 功能描述:Fit Rate / Equivalent Device Hours
IRG4BC40UPBF 功能描述:IGBT 晶體管 600V UltraFast 8-60kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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