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參數(shù)資料
| 型號： | IRG4BC40UD |
| 廠商： | International Rectifier |
| 英文描述： | Fit Rate / Equivalent Device Hours |
| 中文描述： | FIT率/等效器件小時 |
| 文件頁數(shù)： | 27/35頁 |
| 文件大?。?/td> | 112K |
| 代理商： | IRG4BC40UD |
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TEMPERATURE CYCLING (T/C) Unbiased
Conditions
Temperature:
Tmin = - 55°C
Tmax = + 150°C
Unbiased
2000 Cycles
250,500,1000,1500,2000 Nominal
Bias:
Duration:
Test points:
Purpose
Failure Modes
Sensitive Parameters
I
CES,
V
(BR)CES,
R
θ
JC,
V
CE(on)
Temperature Cycling simulates the extremes of thermal stresses which devices will
encounter in the actual circuit applications in combination with potentially extreme
operating ambient temperatures. Some equipment is destined to be used in extreme
environments, and subject to daily temperature cycles.
The primary failure mode for temperature cycling is a thermal fatigue of the silicon / metal
interfaces and metal / metal interfaces. The fatigue results from thermomechanical
stresses due to heating and cooling and will cause electrical or thermal performance to
degrade.
If the degradation occurs at the header / die interface, then the thermal impedance,
R
θ
JC
will begin to increase well before any electrical effect is seen.
If the degradation occurs at the wire bond / die interface or the wire bond / bond post
interface, then on resistance,
V
CE(on)
, will slowly increase or become unstable with time.
The thermal impedance, when measured during this time, may appear to decrease or
change erratically.
The mechanical stresses from the temperature can also propagate fractures in the silicon
when the die is thermally mismatched to the solder / heat sink system. These fractures
will manifest themselves in the form of shorted gates or degraded breakdown
characteristics (
V
(BR)CES
)
IGBT / CoPack
Quarterly Reliability Report
Page 27 of 35
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| IRG4BE40SD | Fit Rate / Equivalent Device Hours |
| IRG4BE40UD | Fit Rate / Equivalent Device Hours |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRG4BC40UPBF | 功能描述:IGBT 晶體管 600V UltraFast 8-60kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IRG4BC40W | 功能描述:IGBT WARP 600V 40A TO-220AB RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:- 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
| IRG4BC40WHR | 制造商:International Rectifier 功能描述:Trans IGBT Chip N-CH 600V 40A 3-Pin(3+Tab) TO-220AB |
| IRG4BC40WL | 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR |
| IRG4BC40W-LPBF | 功能描述:IGBT 晶體管 600V Warp 60-150kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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