參數資料
型號: IRG4BG40MD
廠商: International Rectifier
英文描述: Fit Rate / Equivalent Device Hours
中文描述: FIT率/等效器件小時
文件頁數: 3/35頁
文件大?。?/td> 112K
代理商: IRG4BG40MD
Introduction
Reliability Engineering _____________________________________
Quality Manager _____________________________________
Date _____________________________________
The reliability report is a summary of the test data collated since the
implementation of the reliability programme. This report will be periodically
updated typically on a quarterly basis. Future publications of this report will
also include as appropriate additional information to assist the user in the
interpretation of the data provided. The programme covers only IGBT /
CoPack
manufactured products at IRGB, Holland Road, Oxted.
reliability data provided in this report are for the package types TO247 and
TO220.
The
Further information regarding reliability data is available in the IR data book
IGBT-3, pages E-65-E-72. This also, is available from the Oxted office.
IGBT / CoPack
Quarterly Reliability Report
Page 3 of 35
相關PDF資料
PDF描述
IRG4BG40SD Fit Rate / Equivalent Device Hours
IRG4BG40UD Fit Rate / Equivalent Device Hours
IRG4BH40FD Fit Rate / Equivalent Device Hours
IRG4BH40KD Fit Rate / Equivalent Device Hours
IRG4BH40MD Fit Rate / Equivalent Device Hours
相關代理商/技術參數
參數描述
IRG4BG40SD 制造商:IRF 制造商全稱:International Rectifier 功能描述:Fit Rate / Equivalent Device Hours
IRG4BG40UD 制造商:IRF 制造商全稱:International Rectifier 功能描述:Fit Rate / Equivalent Device Hours
IRG4BH20K-L 功能描述:IGBT UFAST 1200V 11A TO-262 RoHS:否 類別:分離式半導體產品 >> IGBT - 單路 系列:- 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿(最大):1200V Vge, Ic時的最大Vce(開):3V @ 15V,100A 電流 - 集電極 (Ic)(最大):200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件
IRG4BH20K-LPBF 功能描述:IGBT 晶體管 1200V UltraFast 4-20kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IRG4BH20K-S 功能描述:IGBT UFAST 1200V 11A D2PAK RoHS:否 類別:分離式半導體產品 >> IGBT - 單路 系列:- 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿(最大):1200V Vge, Ic時的最大Vce(開):3V @ 15V,100A 電流 - 集電極 (Ic)(最大):200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件