參數(shù)資料
型號(hào)： IRG4BG40UD
廠商： International Rectifier
英文描述： Fit Rate / Equivalent Device Hours
中文描述： FIT率/等效器件小時(shí)
文件頁(yè)數(shù)： 26/35頁(yè)
文件大小： 112K
代理商： IRG4BG40UD
TEMPERATURE & HUMIDITY (THB)
Test circuit
Conditions
Bias:
Vce = 100% of maximum rated
V
up to 500V: 500V for
all devices with rated
V
(BR)CES
greater than 500V *
85°C
85%
2000 Hours nominal
168, 500, 1000,
1500, 2000 Hours nominal.
DUT
DC
BIAS
Temperature:
Relative Humidity:
Duration:
Test points:
* Devices manufactured since week
code 9640 the applied bias:
V
(BR)CES
=
Vmax or 100v which ever the lesser
D
= Diode for CoPack devices only
Purpose
Failure Modes
Sensitive Parameters
V
(BR)CES,
V
CE(on)
Temperature and Humidity bias testing for non-hermetic packages is to subject the
devices to extremes of temperature and humidity to examine the ability of the
package to withstand the deleterious effect of the humid environment.
D
There are two primary failure modes which have been observed. The first failure
mode comes about as a result of the ingression of water molecules into the active
area on the surface of the die. Once sufficient water has accumulated in the region
of the electric field termination structure on the die, the perturbation of that field
begins to degrade the breakdown characteristics of the device.
The second failure mode that has been observed is due to cathodic corrosion of the
aluminum emitter bonding pad. As with first failure mode, water will ingress to the top
of the die. There, in the presence of applied bias, an electric current through the few
monolayers of water will begin to cause the bond pad to dissolve. Eventually. the
corrosion will proceed to the point where the current capability of the device is
increased and become unstable.
The dominance of either of these failure modes is basically determined by the
amount of bias present during test.
Under low bias conditions, the corrosion
proceeds slowly, so the first failure mode will proceed very rapidly and the device will
fail due to on-resistance before the breakdown characteristics can degrade.
相關(guān)PDF資料
PDF描述
IRG4BH40FD Fit Rate / Equivalent Device Hours
IRG4BH40KD Fit Rate / Equivalent Device Hours
IRG4BH40MD Fit Rate / Equivalent Device Hours
IRG4BH40SD Fit Rate / Equivalent Device Hours
IRG4BH40UD Fit Rate / Equivalent Device Hours
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRG4BH20K-L 功能描述:IGBT UFAST 1200V 11A TO-262 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:- 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時(shí)的最大Vce（開(kāi)）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件
IRG4BH20K-LPBF 功能描述:IGBT 晶體管 1200V UltraFast 4-20kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IRG4BH20K-S 功能描述:IGBT UFAST 1200V 11A D2PAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:- 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時(shí)的最大Vce（開(kāi)）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件
IRG4BH20K-SPBF 功能描述:IGBT 晶體管 1200V ULTRAFAST 4-20KHZ DSCRETE IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IRG4BH20K-SPBF 制造商:International Rectifier 功能描述:IGBT TRANSISTOR PACKAGE/CASE:D2-PAK
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*