參數(shù)資料
型號(hào): IRG4BH40KD
廠商: International Rectifier
英文描述: Fit Rate / Equivalent Device Hours
中文描述: FIT率/等效器件小時(shí)
文件頁(yè)數(shù): 25/35頁(yè)
文件大?。?/td> 112K
代理商: IRG4BH40KD
HIGH TEMPERATURE GATE BIAS (HTGB)
Test circuit
Conditions
DUT
Bias:
Temperature:
Duration:
Test points:
Vge = As required
Tmax
2000 Hours nominal
168, 500, 1000,
1500, 2000 Hours nominal.
DC
BIAS
D
= Diode for CoPack devices only
Purpose
Failure Modes
Sensitive Parameters
I
CES,
V
GE(th)
The purpose of High Temperature Gate Bias is to stress the devices with the
applied bias to the gate while at elevated junction temperature to accelerate time
dependent dielectric breakdown of the gate structure.
D
The primary failure modes for long term gate stress is a rupture of the gate oxide,
causing either a resistive short between gate-to-emitter or gate-to-collector or what
appears to be a low breakdown diode between the gate and source.
The oxide breakdown has been attributed to the degradation in time of existing
defects in the thermally grown oxide. These defects can take form of localized
thickness
variations,
structural
anomalies
particulate, within the oxide.
or
the
presence
of
sub-micron
As with HTRB, extreme care must be exercised in the course of a long term test to
avoid potential hazards such as electrostatic discharge or electrical overstress to
the gate during test. Failures arising from this abuse are virtually indistinguishable
from true oxide breakdown which result from the actual stress test.
IGBT / CoPack
Quarterly Reliability Report
Page 25 of 35
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRG4BH40MD 制造商:IRF 制造商全稱:International Rectifier 功能描述:Fit Rate / Equivalent Device Hours
IRG4BH40SD 制造商:IRF 制造商全稱:International Rectifier 功能描述:Fit Rate / Equivalent Device Hours
IRG4BH40UD 制造商:IRF 制造商全稱:International Rectifier 功能描述:Fit Rate / Equivalent Device Hours
IRG4C30W-S 制造商:未知廠家 制造商全稱:未知廠家 功能描述:
IRG4CC10KB 制造商:IRF 制造商全稱:International Rectifier 功能描述:IRG4CC10KB IGBT Die in Wafer Form