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參數(shù)資料
| 型號： | IRG4PC40UPBF |
| 廠商： | International Rectifier |
| 英文描述： | INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT |
| 中文描述： | 絕緣柵雙極晶體管IGBT的速度超快速 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 641K |
| 代理商： | IRG4PC40UPBF |
IRG4PC40UPbF
UltraFast Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
PD-95184
E
C
G
n-channel
TO-247AC
Features
UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
Industry standard TO-247AC package
Lead-Free
Generation 4 IGBT's offer highest efficiency available
IGBT's optimized for specified application conditions
Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
Benefits
Parameter
Junction-to-Case
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
------
------
------
------
Typ.
------
0.24
------
6 (0.21)
Max.
0.77
------
40
------
Units
R
θ
JC
R
θ
CS
R
θ
JA
Wt
www.irf.com
°C/W
g (oz)
Absolute Maximum Ratings
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
600
40
20
160
160
±20
15
160
65
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
E
ARV
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
A
V
mJ
-55 to +150
°C
300 (0.063 in. (1.6mm) from case)
10 lbfin (1.1Nm)
Thermal Resistance
V
CES
= 600V
V
CE(on) typ.
=
1.72V
@V
GE
= 15V, I
C
= 20A
04/23/04
W
1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRG4PC40U | INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.1.72V, @Vge=15V, Ic=20A) |
| IRG4PC40WPBF | INSULATED GATE BIPOLAR TRANSISTOR |
| IRG4PC40 | INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.50V, @Vge=15V, Ic=27A) |
| IRG4PC40W | INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.05V, @Vge=15V, Ic=20A) |
| IRG4PC40F | INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.50V, @Vge=15V, Ic=27A) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRG4PC40W | 制造商:International Rectifier 功能描述:IGBT TO-247 |
| IRG4PC40WPBF | 功能描述:IGBT 晶體管 600V Warp 60-150kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IRG4PC50F | 制造商:International Rectifier 功能描述:IGBT TO-247 |
| IRG4PC50FD | 制造商:International Rectifier 功能描述:IGBT TO-247 |
| IRG4PC50FD-EPBF | 功能描述:IGBT 晶體管 600V FAST 1-8 KHZ COPACK IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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