參數資料
型號： IRG4PC50FDPBF
廠商： International Rectifier
英文描述： INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
中文描述： 絕緣柵雙極型晶體管，超快軟恢復二極管
文件頁數： 2/11頁
文件大?。?/td> 765K
代理商： IRG4PC50FDPBF
IRG4PC50FDPbF
2
www.irf.com
Parameter
Q
g
Total Gate Charge (turn-on)
Qge
Gate - Emitter Charge (turn-on)
Q
gc
Gate - Collector Charge (turn-on)
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
ts
Total Switching Loss
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
E
ts
Total Switching Loss
L
E
Internal Emitter Inductance
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
t
rr
Diode Reverse Recovery Time
Min. Typ. Max. Units
----
190
----
28
----
65
----
55
----
25
----
240
----
140
----
1.5
----
2.4
----
3.9
----
59
----
27
----
400
----
260
----
6.5
----
13
----
4100
----
250
----
49
----
50
----
105
----
4.5
----
8.0
----
112
----
420 1200
----
250
----
160
Conditions
290
42
97
----
----
360
210
----
----
5.0
----
----
----
----
----
----
----
----
----
75
160
10
15
375
I
C
= 39A
V
CC
= 400V
V
GE
= 15V
T
J
= 25°C
I
C
= 39A, V
CC
= 480V
V
GE
= 15V, R
G
= 5.0
Energy losses include "tail" and
diode reverse recovery.
See Fig. 9, 10, 11, 18
nC
See Fig. 8
ns
mJ
T
J
= 150°C, See Fig. 9, 10, 11, 18
I
C
= 39A, V
CC
= 480V
V
GE
= 15V, R
G
= 5.0
Energy losses include "tail" and
diode reverse recovery.
Measured 5mm from package
V
GE
= 0V
V
CC
= 30V
See Fig. 7
= 1.0MHz
T
J
= 25°C See Fig.
T
J
= 125°C 14 I
F
= 25A
T
J
= 25°C See Fig.
T
J
= 125°C 15 V
R
= 200V
T
J
= 25°C See Fig.
T
J
= 125°C 16 di/dt 200A/μs
T
J
= 25°C See Fig.
T
J
= 125°C 17
ns
mJ
nH
pF
ns
I
rr
Diode Peak Reverse Recovery Current
A
Q
rr
Diode Reverse Recovery Charge
nC
di
(rec)M
/dt
Diode Peak Rate of Fall of Recovery
During t
b
----
----
A/μs
Parameter
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
V
CE(on)
Collector-to-Emitter Saturation Voltage
Min. Typ. Max. Units
600
----
----
0.62
----
1.45
----
1.79
----
1.53
3.0
----
-14
21
30
----
----
----
----
----
1.3
----
1.2
----
----
Conditions
----
----
1.6
----
----
6.0
---- mV/°C V
CE
= V
GE
, I
C
= 250μA
----
S
V
CE
= 100V, I
C
= 39A
250
μA
V
GE
= 0V, V
CE
= 600V
6500
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
1.7
V
I
C
= 25A
1.5
I
C
= 25A, T
J
= 150°C
±100
nA
V
GE
= ±20V
V
V
GE
= 0V, I
C
= 250μA
V
GE
= 0V, I
C
= 1.0mA
I
C
= 39A
I
C
= 70A
I
C
= 39A, T
J
= 150°C
V
CE
= V
GE
, I
C
= 250μA
V/°C
V
GE
= 15V
See Fig. 2, 5
V
V
GE(th)
V
GE(th)
/
T
J
g
fe
I
CES
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage ----
Forward Transconductance
Zero Gate Voltage Collector Current
V
FM
Diode Forward Voltage Drop
See Fig. 13
I
GES
Gate-to-Emitter Leakage Current
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
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