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參數(shù)資料
| 型號： | IRG4PC50UPBF |
| 廠商： | International Rectifier |
| 英文描述： | INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT |
| 中文描述： | 絕緣柵雙極晶體管IGBT的速度超快速 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 642K |
| 代理商： | IRG4PC50UPBF |
IRG4PC50UPbF
UltraFast Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
PD -95186
E
C
G
n-channel
TO-247AC
Features
UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
Industry standard TO-247AC package
Lead-Free
Generation 4 IGBT's offer highest efficiency available
IGBT's optimized for specified application conditions
Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
Benefits
V
CES
= 600V
V
CE(on) typ.
=
1.65V
@V
GE
= 15V, I
C
= 27A
Parameter
Typ.
----
0.24
----
6 (0.21)
Max.
0.64
----
40
----
Units
R
θ
JC
R
θ
CS
R
θ
JA
Wt
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
°C/W
g (oz)
Thermal Resistance
Parameter
Max.
600
55
27
220
220
± 20
20
200
78
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
E
ARV
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
A
V
mJ
-55 to + 150
300 (0.063 in. (1.6mm from case )
10 lbfin (1.1Nm)
°C
Absolute Maximum Ratings
W
04/26/04
www.irf.com
1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRG4PC50WPBF | INSULATED GATE BIPOLAR TRANSISTOR |
| IRG4PC60UPBF | INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT |
| IRG4PE40FD | Fit Rate / Equivalent Device Hours |
| IRG4BC40FD | Fit Rate / Equivalent Device Hours |
| IRG4BC40KD | Fit Rate / Equivalent Device Hours |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRG4PC50W | 制造商:International Rectifier 功能描述:IGBT TO-247 |
| IRG4PC50W-E | 制造商:International Rectifier 功能描述:600V 55000.000A TO-247 / IGBT : JA / DIS |
| IRG4PC50WPBF | 功能描述:IGBT 晶體管 600V Warp 60-150kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IRG4PC60F | 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR |
| IRG4PC60F-P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:600V Fast 1-8 kHz Discrete IGBT in a TO-247AC Solder Plate package |
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