參數(shù)資料
型號: IRG4PC50UPBF
廠商: International Rectifier
英文描述: INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT
中文描述: 絕緣柵雙極晶體管IGBT的速度超快速
文件頁數(shù): 5/9頁
文件大?。?/td> 642K
代理商: IRG4PC50UPBF
IRG4PC50UPbF
www.irf.com
5
Fig. 10
- Typical Switching Losses vs.
Junction Temperature
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
0
2000
4000
6000
8000
1
10
100
V , Collector-to-Emitter Voltage (V)
C
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
C
ies
C
res
C
oes
0
4
8
12
16
20
0
40
Q , Total Gate Charge (nC)
80
120
160
200
G
V
A
V = 400V
I = 27A
0.1
1
10
-60
-40
-20
T , Junction Temperature (°C)
0
20
40
60
80
100
120
140
160
T
A
I = 54A
I = 27A
C
I = 14A
R = 5.0
V = 15V
V = 480V
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
0
10
20
30
40
50
60
T
R , Gate Resistance (
)
A
V = 480V
V = 15V
T = 25°C
I = 27A
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