參數(shù)資料
型號(hào)： IRG4PH40MD
廠商： International Rectifier
英文描述： Fit Rate / Equivalent Device Hours
中文描述： FIT率/等效器件小時(shí)
文件頁(yè)數(shù)： 24/35頁(yè)
文件大?。?/td> 112K
代理商： IRG4PH40MD
HIGH TEMPERATURE REVERSE BIAS (HTRB)
Test circuit
Conditions
Bias:
Temperature:
Duration:
Test points:
Vce = As required
Tmax
2000 Hours nominal
168, 500, 1000,
1500, 2000, Hours nominal
DUT
DC
BIAS
D
= Diode for CoPack devices only
Purpose
Failure Modes
Sensitive Parameters
V
(BR)CES,
I
CES,
I
GES,
V
GE(th)
High temperature reverse bias (HTRB) burn-in is to stress the devices with the
applied voltage in the blocking mode while elevating the junction temperature. This
will accelerate any blocking voltage degradation process.
D
The primary failure mode for HTRB stress is a gradual degradation of the breakdown
characteristics or
V
(BR)CES
. This degradation has been attributed to the presence of
foreign materials and polar/ionic contaminants. These materials, migrating under
application of electric field at high temperature, can perturb the electric field
termination structure.
Extreme care must be exercised in the course of a long term test to avoid potential
hazards such as electrostatic discharge or electrical overstress to the gate during
test. Failures arising from this abuse can be virtually indistinguishable from true
HTRB failures which results from the actual stress test.
IGBT / CoPack
Quarterly Reliability Report
Page 24 of 35
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRG4PH40S 制造商:International Rectifier 功能描述:1200V 42.000A TO-247 / IGBT : JA / DISCR
IRG4PH40SD 制造商:IRF 制造商全稱:International Rectifier 功能描述:Fit Rate / Equivalent Device Hours
IRG4PH40U 制造商:International Rectifier 功能描述:IGBT TO-247
IRG4PH40UD 制造商:International Rectifier 功能描述:IGBT TO-247
IRG4PH40UD2 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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