參數(shù)資料
型號(hào)： IRG4PH40MD
廠商： International Rectifier
英文描述： Fit Rate / Equivalent Device Hours
中文描述： FIT率/等效器件小時(shí)
文件頁(yè)數(shù)： 5/35頁(yè)
文件大?。?/td> 112K
代理商： IRG4PH40MD
Fit Rate / Equivalent Device Hours
λ
= Proportion allowed system failures
Time period
X
1
X
10
9
=
FITS
No. of devices
In the case of the example,
λ
=
0.01 Failures
720 Hours
X
1
=
10
9
=
14 FITS
1000 Devices
or 14 FITs or 14 failures per 10
9
devices hours.
Traditionally, reliability results have been presented in terms of Mean-Time-To-Failure
or Median-Time-To-Failure.
While these results have their value, they do not
necessarily tell the designer what he most needs to know. For example, the Median-
Time-To-Failure tells the engineer how long it will take for half a particular lot of
devices to fail. Clearly no designer wishes to have a 50% failure rate within a
reasonable equipment lifetime. Of greater interest, therefore, is the time to failure of a
much smaller percentage of devices say 1% or 0.1%. For example, in a given
application one failure per hundred units over five years is an acceptable failure rate
for the equipment, the designer knows that time to accumulate 1% failure of that
components per unit, then no more than 0.1% of the components may fail in five
years. Therefore, the IGBT / CoPack reliability or operating-life data is presented in
terms of the time it will take to produce a prescribed number of failures under given
operating conditions.
To obtain a perspective of failure rate from an example, let us assume that an
electronic system contains 1,000 semiconductor devices, and that it can tolerate 1%
system failures per month. The equation for the device failure is:
IGBT / CoPack
Quarterly Reliability Report
Page 5 of 35
相關(guān)PDF資料
PDF描述
IRG4PF50WDPBF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4PF50WPBF INSULATED GATE BIPOLAR TRANSISTOR
IRG4PF50WD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4PH30KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A)
IRG4PH30 INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRG4PH40S 制造商:International Rectifier 功能描述:1200V 42.000A TO-247 / IGBT : JA / DISCR
IRG4PH40SD 制造商:IRF 制造商全稱:International Rectifier 功能描述:Fit Rate / Equivalent Device Hours
IRG4PH40U 制造商:International Rectifier 功能描述:IGBT TO-247
IRG4PH40UD 制造商:International Rectifier 功能描述:IGBT TO-247
IRG4PH40UD2 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*