參數(shù)資料
型號： IRG4PH50UDPBF
廠商： International Rectifier
英文描述： INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
中文描述： 絕緣柵雙極型晶體管，超快軟恢復(fù)二極管
文件頁數(shù)： 2/11頁
文件大?。?/td> 688K
代理商： IRG4PH50UDPBF
IRG4PH50UDPbF
2
www.irf.com
Parameter
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
V
CE(on)
Collector-to-Emitter Saturation Voltage
Min. Typ. Max. Units
1200
—
—
1.20
—
2.56
—
2.78
—
3.20
—
2.54
3.0
—
—
-13
23
35
—
—
—
—
—
2.5
—
2.1
—
—
Conditions
V
GE
= 0V, I
C
= 250μA
V
GE
= 0V, I
C
= 1.0mA
I
C
= 20A
I
C
= 24A
I
C
= 45A
I
C
= 24A, T
J
= 150°C
V
CE
= V
GE
, I
C
= 250μA
mV/°C V
CE
= V
GE
, I
C
= 250μA
S
V
CE
= 100V, I
C
= 24A
μA
V
GE
= 0V, V
CE
= 1200V
V
GE
= 0V, V
CE
= 1200V, T
J
= 150°C
V
I
C
= 16A
I
C
= 16A, T
J
= 150°C
nA
V
GE
= ±20V
—
—
3.5
3.7
—
—
6.0
—
—
250
6500
3.5
3.0
±100
V
V/°C
V
GE
= 15V
V
See Fig. 2, 5
V
GE(th)
V
GE(th)
/
T
J
g
fe
I
CES
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance
Zero Gate Voltage Collector Current
V
FM
Diode Forward Voltage Drop
See Fig. 13
I
GES
Gate-to-Emitter Leakage Current
Parameter
Q
g
Total Gate Charge (turn-on)
Qge
Gate - Emitter Charge (turn-on)
Q
gc
Gate - Collector Charge (turn-on)
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
ts
Total Switching Loss
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
E
ts
Total Switching Loss
L
E
Internal Emitter Inductance
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
t
rr
Diode Reverse Recovery Time
Min. Typ. Max. Units
—
160
—
27
—
53
—
47
—
24
—
110
—
180
—
2.10
—
1.50
—
3.60
—
46
—
27
—
240
—
330
—
6.38
—
13
—
3600
—
160
—
31
—
90
—
164
—
5.8
—
8.3
—
260
—
680 1838
—
120
—
76
Conditions
250
40
80
—
—
170
260
—
—
4.6
—
—
—
—
—
—
—
—
—
135
245
10
15
675
I
C
= 24A
V
CC
= 400V
V
GE
= 15V
T
J
= 25°C
I
C
= 24A, V
CC
= 800V
V
GE
= 15V, R
G
= 5.0
Energy losses include "tail" and
diode reverse recovery.
See Fig. 9, 10, 18
nC
See Fig. 8
ns
mJ
T
J
= 150°C, See Fig. 11, 18
I
C
= 24A, V
CC
= 800V
V
GE
= 15V, R
G
= 5.0
Energy losses include "tail" and
diode reverse recovery.
Measured 5mm from package
V
GE
= 0V
V
CC
= 30V
= 1.0MHz
T
J
= 25°C See Fig.
T
J
= 125°C 14 I
F
= 16A
T
J
= 25°C See Fig.
T
J
= 125°C 15 V
R
= 200V
T
J
= 25°C See Fig.
T
J
= 125°C 16 di/dt = 200A/μs
T
J
= 25°C See Fig.
T
J
= 125°C 17
ns
mJ
nH
pF
See Fig. 7
ns
I
rr
Diode Peak Reverse Recovery Current
A
Q
rr
Diode Reverse Recovery Charge
nC
di
(rec)M
/dt
Diode Peak Rate of Fall of Recovery
During t
b
—
—
A/μs
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
相關(guān)PDF資料
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IRG4PH50UPBF 功能描述:IGBT 晶體管 1200V ULTRAFAST 5-40KHZ DSCRETE IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IRG4PSC71K 功能描述:IGBT UFAST 600V 85A SUPER-247 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:- 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時(shí)的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件
IRG4PSC71KD 功能描述:IGBT W/DIODE 600V 85A SUPER-247 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:- 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時(shí)的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件
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