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參數資料
| 型號： | IRGBC40M-S |
| 廠商： | International Rectifier |
| 英文描述： | INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=24A) |
| 中文描述： | 絕緣柵雙極晶體管（VCES和\u003d 600V的，@和VGE \u003d 15V的，集成電路\u003d 24A條） |
| 文件頁數： | 3/6頁 |
| 文件大小： | 248K |
| 代理商： | IRGBC40M-S |
C-65
Fig. 1
- Typical Load Current vs. Frequency
(For square wave, I=I
RMS
of fundamental; for triangular wave, I=I
PK
)
Fig. 2
- Typical Output Characteristics
Fig. 3
- Typical Transfer Characteristics
IRGBC40F
0
20
40
60
0.1
1
10
100
L
f, Frequency (kHz)
60% of rated
voltage
Ideal diodes
Square wave:
Triangular wave:
Clamp voltage:
80% of rated
For both:
Duty cycle: 50%
TJ
Tsink
Gate drive as specified
Power Dissipation = 28W
1
10
100
1000
0.1
1
10
C
I
V , Collector-to-Emitter Voltage (V)
T = 150°C
T = 25°C
V = 15V
20μs PULSE WIDTH
0.01
0.1
1
10
100
1000
5
10
15
20
C
I
V , Gate-to-Emitter Voltage (V)
T = 25°C
T = 150°C
V = 100V
5μs PULSE WIDTH
To Order
Next Data Sheet
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相關代理商/技術參數 |
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