參數(shù)資料
型號(hào)： IRGP30B120KD-E
廠商： International Rectifier
英文描述： Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode(帶超快軟恢復(fù)的絕緣柵雙極型晶體管,應(yīng)用于電機(jī)控制)
中文描述： 絕緣柵雙極晶體管的超快軟恢復(fù)二極管（帶超快軟恢復(fù)的絕緣柵雙極型晶體管，應(yīng)用于電機(jī)控制）
文件頁數(shù)： 1/12頁
文件大?。?/td> 132K
代理商： IRGP30B120KD-E
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
Low V
CE
(on) Non Punch Through (NPT)
Technology
Low Diode V
F
(1.76V Typical @ 25A & 25°C)
10
μ
s Short Circuit Capability
Square RBSOA
Ultrasoft Diode Recovery Characteristics
Positive V
CE
(on) Temperature Coefficient
Extended Lead TO-247AD Package
Benefits
Benchmark Efficiency for Motor Control
Applications
Rugged Transient Performance
Low EMI
Significantly Less Snubber Required
Excellent Current Sharing in Parallel Operation
Longer leads for Easier Mounting
Absolute Maximum Ratings
Thermal Resistance
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Transient Thermal Impedance Junction-to-Case
(Fig.24)
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
6 (0.21)
Max.
0.42
0.83
–––
40
–––
Units
R
θ
JC
R
θ
JC
R
θ
CS
R
θ
JA
W
t
Z
θ
JC
www.irf.com
°C/W
g (oz)
12/14/99
E
G
C
IRGP30B120KD-E
Motor Control Co-Pack IGBT
PD- 93818
TO-247AD
N-channel
1
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
(Fig.1)
Continuous Collector Current
(Fig.1)
Pulsed Collector Current
(Fig.3, Fig. CT.5)
Clamped Inductive Load Current
(Fig.4, Fig. CT.2)
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
(Fig.2)
Maximum Power Dissipation
(Fig.2)
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw.
Max.
1200
60
30
120
120
30
120
± 20
300
120
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 100°C
I
FM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
A
V
-55 to + 150
300, (0.063 in. (1.6mm) from case)
10 lbfin (1.1Nm)
°C
W
V
CES
= 1200V
V
CE(on) typ.
= 2.28V
V
GE
= 15V, I
C
= 25A, 25°C
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRGP30B120KD-EP 功能描述:IGBT 晶體管 1200V ULTRAFAST 5-40 KHZ COPACK IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IRGP30B120KD-EP 制造商:International Rectifier 功能描述:IGBT N CH 1200V 60A TO-247AD 制造商:International Rectifier 功能描述:IGBT, N CH, 1200V, 60A, TO-247AD
IRGP30B120KD-EP 制造商:International Rectifier 功能描述:IGBT Module
IRGP30B120KDPBF 功能描述:IGBT 晶體管 1200V ULTRAFAST 5-40 KHZ COPACK IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IRGP30B60KD 制造商:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR W/ ULTRAFAST SOFT RECOVERY - Bulk
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