- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄360955 > IRGP450LC PDF資料下載
參數(shù)資料
| 型號： | IRGP450LC |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 159K |
| 代理商： | IRGP450LC |
IRFP450LC
HEXFET
Power MOSFET
PD - 9.1231
Revision 0
V
DSS
= 500V
R
DS(on)
= 0.40
I
D
= 14A
Parameter
Max.
14
8.6
56
190
1.5
±30
760
14
19
3.5
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 150
°C
300 (1.6mm from case)
10 lbfin (1.1Nm)
Thermal Resistance
Ultra Low Gate Charge
Reduced Gate Drive Requirement
Enhanced 30V V
gs
Rating
Reduced C
iss
, C
oss
, C
rss
Isolated Central Mounting Hole
Dynamic dv/dt Rated
Repetitive Avalanche Rated
This new series of Low Charge HEXFET Power MOSFETs achieve significantly
lower gate charge over conventional MOSFETs. Utilizing advanced Hexfet
technology the device improvements allow for reduced gate drive requirements,
faster switching speeds and increased total system savings. These device
improvements combined with the proven ruggedness and reliability of HEXFETs
offer the designer a new standard in power transistors for switching applications.
The TO-247 package is preferred for commercial-industrial applications where
higher power levels preclude the use of TO-220 devices. The TO-247 is similar
but superior to the earlier TO-218 package because of its isolated mounting hole.
Description
Absolute Maximum Ratings
Parameter
Min.
––––
––––
––––
Typ.
––––
0.24
––––
Max.
0.65
––––
40
Units
R
θ
JC
R
θ
CS
R
θ
JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°C/W
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRGP460LC | |
| IRFP450LC | 500V,14A,N-Channel HEXFET Power MOSFET(500V,14A,N溝道 HEXFET功率MOS場效應(yīng)管) |
| IRGPC30KD2 | |
| IRGPC40K | |
| IRGPC40KD2 | |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRGP450U | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Fit Rate / Equivalent Device Hours |
| IRGP450UD2 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Fit Rate / Equivalent Device Hours |
| IRGP460LC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| IRGP4640D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:INSULATED GATEBIPOLARTRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| IRGP4640D-EPBF | 功能描述:IGBT 晶體管 600V UltraFast IGBT 40A 250W 75nC RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。