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參數(shù)資料
| 型號： | IRFP450LC |
| 廠商： | International Rectifier |
| 英文描述： | 500V,14A,N-Channel HEXFET Power MOSFET(500V,14A,N溝道 HEXFET功率MOS場效應(yīng)管) |
| 中文描述： | 的500V，14A條，N溝道HEXFET功率MOSFET（500V及14A條，?溝道的HEXFET功率馬鞍山場效應(yīng)管） |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 159K |
| 代理商： | IRFP450LC |
IRFP450LC
HEXFET
Power MOSFET
PD - 9.1231
Revision 0
V
DSS
= 500V
R
DS(on)
= 0.40
I
D
= 14A
Parameter
Max.
14
8.6
56
190
1.5
±30
760
14
19
3.5
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 150
°C
300 (1.6mm from case)
10 lbfin (1.1Nm)
Thermal Resistance
Ultra Low Gate Charge
Reduced Gate Drive Requirement
Enhanced 30V V
gs
Rating
Reduced C
iss
, C
oss
, C
rss
Isolated Central Mounting Hole
Dynamic dv/dt Rated
Repetitive Avalanche Rated
This new series of Low Charge HEXFET Power MOSFETs achieve significantly
lower gate charge over conventional MOSFETs. Utilizing advanced Hexfet
technology the device improvements allow for reduced gate drive requirements,
faster switching speeds and increased total system savings. These device
improvements combined with the proven ruggedness and reliability of HEXFETs
offer the designer a new standard in power transistors for switching applications.
The TO-247 package is preferred for commercial-industrial applications where
higher power levels preclude the use of TO-220 devices. The TO-247 is similar
but superior to the earlier TO-218 package because of its isolated mounting hole.
Description
Absolute Maximum Ratings
Parameter
Min.
––––
––––
––––
Typ.
––––
0.24
––––
Max.
0.65
––––
40
Units
R
θ
JC
R
θ
CS
R
θ
JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°C/W
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| IRGPC46 | TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 60A I(C) | TO-247AC |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFP450LCPBF | 功能描述:MOSFET N-Chan 500V 14 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFP450N | 制造商:International Rectifier 功能描述:MOSFET Transistor, N-Channel, TO-247AC |
| IRFP450NPBF | 功能描述:MOSFET N-Chan 500V 14 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFP450PBF | 功能描述:MOSFET N-Chan 500V 14 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFP450PBF | 制造商:Vishay Semiconductors 功能描述:MOSFET |
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