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參數(shù)資料
| 型號(hào)： | IRGP50B60PDPBF |
| 廠商： | International Rectifier |
| 英文描述： | WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE |
| 中文描述： | WARP2系列IGBT與超快軟恢復(fù)二極管 |
| 文件頁數(shù)： | 4/10頁 |
| 文件大小： | 396K |
| 代理商： | IRGP50B60PDPBF |
IRGP50B60PDPbF
4
www.irf.com
Fig. 8
- Typical V
CE
vs. V
GE
T
J
= 25°C
Fig. 9
- Typical V
CE
vs. V
GE
T
J
= 125°C
Fig. 12
- Typ. Switching Time vs. I
C
T
J
= 125°C; L = 200μH; V
CE
= 390V, R
G
= 3.3
; V
GE
= 15V.
Diode clamp used: 30ETH06 (See C.T.3)
Fig. 11
- Typ. Energy Loss vs. I
C
T
J
= 125°C; L = 200μH; V
CE
= 390V, R
G
= 3.3
; V
GE
= 15V.
Diode clamp used: 30ETH06 (See C.T.3)
Fig. 10
- Maximum. Diode Forward
Characteristics tp = 80μs
Fig. 7
- Typ. Transfer Characteristics
V
CE
= 50V; tp = 10μs
0
5
10
15
20
VGE (V)
0
100
200
300
400
500
600
IC
TJ = 25°C
TJ = 125°C
TJ = 125°C
TJ = 25°C
0
5
10
15
20
VGE (V)
0
5
10
15
20
25
VC
ICE = 15A
ICE = 33A
ICE = 50A
0
5
10
15
20
VGE (V)
0
5
10
15
20
25
VC
ICE = 15A
ICE = 33A
ICE = 50A
10
20
30
40
50
60
70
IC (A)
200
400
600
800
1000
1200
1400
1600
1800
E
EOFF
EON
0
10
20
30
40
50
60
70
IC (A)
10
100
1000
S
tR
tdOFF
tF
tdON
1
10
100
0.6
1.0
1.4
1.8
2.2
2.6
T = 150°C
T = 125°C
T = 25°C
A
Forward Voltage Drop - V (V)
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