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參數(shù)資料
| 型號(hào)： | IRGP50B60PDPBF |
| 廠商： | International Rectifier |
| 英文描述： | WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE |
| 中文描述： | WARP2系列IGBT與超快軟恢復(fù)二極管 |
| 文件頁(yè)數(shù)： | 5/10頁(yè) |
| 文件大?。?/td> | 396K |
| 代理商： | IRGP50B60PDPBF |
IRGP50B60PDPbF
www.irf.com
5
Fig. 14
- Typ. Switching Time vs. R
G
T
J
= 125°C; L = 200μH; V
CE
= 390V, I
CE
= 33A; V
GE
= 15V
Diode clamp used: 30ETH06 (See C.T.3)
Fig. 13
- Typ. Energy Loss vs. R
G
T
J
= 125°C; L = 200μH; V
CE
= 390V, I
CE
= 33A; V
GE
= 15V
Diode clamp used: 30ETH06 (See C.T.3)
35
Fig. 16
- Typ. Capacitance vs. V
CE
V
GE
= 0V; f = 1MHz
Fig. 15
- Typ. Output Capacitance
Stored Energy vs. V
CE
Fig. 17
- Typical Gate Charge
vs. V
GE
I
CE
= 33A
Fig. 18
- Normalized Typ. V
CE(on)
vs. Junction Temperature
I
C
= 33A, V
GE
= 15V
0
10
20
30
40
RG (
)
200
400
600
800
1000
1200
1400
1600
1800
E
EON
EOFF
0
10
20
30
40
RG (
)
10
100
1000
S
tR
tdOFF
tF
tdON
0
100
200
300
400
500
600
700
Voltage (V)
0
5
10
15
20
25
30
Eo
0
100
200
300
400
500
VCE (V)
10
100
1000
10000
C
Cies
Coes
Cres
0
50
100
150
200
250
300
Q G, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
VG
VCE = 480V
-60 -40 -20 0
20 40 60 80 100120140160
TC (°C)
0.5
0.8
1.0
1.3
1.5
N
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