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參數(shù)資料
| 型號(hào)： | IRGPC30F |
| 廠商： | International Rectifier |
| 英文描述： | Insulated Gate Bipolar Transistors (IGBTs)(快速絕緣柵型雙極型晶體管) |
| 中文描述： | 絕緣門雙極晶體管（IGBTs）（快速絕緣柵型雙極型晶體管） |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 106K |
| 代理商： | IRGPC30F |
Fig. 1
- Typical Load Current vs. Frequency
(For square wave, I=I
of fundamental; for triangular wave, I=I
PK
)
Fig. 2
- Typical Output Characteristics
Fig. 3
- Typical Transfer Characteristics
IRGPC30F
1
10
100
1000
1
10
V , Collector-to-Emitter Voltage (V)
C
I
T = 150°C
T = 25°C
V = 15V
20μs PULSE WIDTH
0.1
1
10
100
1000
5
10
15
20
C
I
V , Gate-to-Emitter Voltage (V)
T = 25°C
T = 150°C
V = 100V
5μs PULSE WIDTH
0
10
20
30
40
0.1
1
10
100
L
f, Frequency (kHz)
60% of rated
voltage
Ideal diodes
Square wave:
Triangular wave:
Clamp voltage:
80% of rated
For both:
Duty cycle: 50%
J
Tsink
Gate drive as specified
Power Dissipation = 24W
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRGPC30K | Insulated Gate Bipolar Transistors (IGBTs)(短路額定超快速絕緣柵型雙極型晶體管) |
| IRGPC30MD2 | Insulated Gate Bipolar Transistors (IGBTs) with Ultrafast Soft Recovery Diode(帶超快軟恢復(fù)二極管的絕緣柵雙極型晶體管) |
| IRGPC40F | Insulated Gate Bipolar Transistors (IGBTs)(快速絕緣柵型雙極型晶體管) |
| IRGPC40MD2 | Insulated Gate Bipolar Transistors (IGBTs)(短路額定快速絕緣柵型雙極型晶體管) |
| IRGPC40M | Insulated Gate Bipolar Transistors (IGBTs)(短路額定快速絕緣柵型雙極型晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRGPC30FD2 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=17A) |
| IRGPC30K | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Fit Rate / Equivalent Device Hours |
| IRGPC30KD2 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| IRGPC30M | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Fit Rate / Equivalent Device Hours |
| IRGPC30MD2 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Fit Rate / Equivalent Device Hours |
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