參數(shù)資料
型號: IRGPC30F
廠商: International Rectifier
英文描述: Insulated Gate Bipolar Transistors (IGBTs)(快速絕緣柵型雙極型晶體管)
中文描述: 絕緣門雙極晶體管(IGBTs)(快速絕緣柵型雙極型晶體管)
文件頁數(shù): 5/7頁
文件大?。?/td> 106K
代理商: IRGPC30F
IRGPC30F
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
Fig. 10
- Typical Switching Losses vs.
Case Temperature
2.2
2.3
2.4
2.5
2.6
2.7
0
10
20
30
40
50
60
T
R , Gate Resistance ( )
W
V = 480V
V = 15V
T = 25°C
I = 17A
1
10
-60
-40
-20
T , Case Temperature (°C)
0
20
40
60
80
100 120 140 160
T
R = 23
V = 15V
V = 480V
I = 34A
I = 17A
I = 8.5A
0
200
400
600
800
1000
1200
1400
1
10
100
C
V , Collector-to-Emitter Voltage (V)
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
C
ies
C
res
C
oes
0
4
8
12
16
20
0
5
Q , Total Gate Charge (nC)
10
15
20
25
30
G
V
V = 400V
I = 17A
相關PDF資料
PDF描述
IRGPC30K Insulated Gate Bipolar Transistors (IGBTs)(短路額定超快速絕緣柵型雙極型晶體管)
IRGPC30MD2 Insulated Gate Bipolar Transistors (IGBTs) with Ultrafast Soft Recovery Diode(帶超快軟恢復二極管的絕緣柵雙極型晶體管)
IRGPC40F Insulated Gate Bipolar Transistors (IGBTs)(快速絕緣柵型雙極型晶體管)
IRGPC40MD2 Insulated Gate Bipolar Transistors (IGBTs)(短路額定快速絕緣柵型雙極型晶體管)
IRGPC40M Insulated Gate Bipolar Transistors (IGBTs)(短路額定快速絕緣柵型雙極型晶體管)
相關代理商/技術參數(shù)
參數(shù)描述
IRGPC30FD2 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=17A)
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