參數(shù)資料
型號(hào)： IRGPC40F
廠商： International Rectifier
英文描述： Insulated Gate Bipolar Transistors (IGBTs)(快速絕緣柵型雙極型晶體管)
中文描述： 絕緣門雙極晶體管（IGBTs）（快速絕緣柵型雙極型晶體管）
文件頁數(shù)： 2/7頁
文件大?。?/td> 107K
代理商： IRGPC40F
IRGPC40F
Parameter
Q
g
Total Gate Charge (turn-on)
Q
ge
Gate - Emitter Charge (turn-on)
Q
gc
Gate - Collector Charge (turn-on)
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
ts
Total Switching Loss
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
E
ts
Total Switching Loss
L
E
Internal Emitter Inductance
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
Min. Typ. Max. Units
----
59
----
8.6
----
25
----
25
----
37
----
240
----
230
----
0.65
----
3.0
----
3.65
----
28
----
37
----
380
----
460
----
6.0
----
13
----
1500
----
190
----
20
Conditions
I
C
= 27A
V
CC
= 400V
V
GE
= 15V
T
J
= 25°C
I
C
= 27A, V
CC
= 480V
V
GE
= 15V, R
G
= 10
Energy losses include "tail"
80
10
42
----
----
410
420
----
----
6.0
----
----
----
----
----
----
----
----
----
nC
See Fig. 8
ns
mJ
See Fig. 9, 10, 11, 14
T
J
= 150°C,
I
C
= 27A, V
CC
= 480V
V
GE
= 15V, R
G
= 10
Energy losses include "tail"
See Fig. 10, 14
Measured 5mm from package
V
GE
= 0V
V
CC
= 30V
= 1.0MHz
ns
mJ
nH
pF
See Fig. 7
Notes:
Repetitive rating; V
GE
=20V, pulse width
limited by max. junction temperature.
( See fig. 13b )
V
CC
=80%(V
CES
), V
GE
=20V, L=10μH,
R
G
= 10
, ( See fig. 13a )
Repetitive rating; pulse width limited
by maximum junction temperature.
Pulse width
≤
80μs; duty factor
≤
0.1%.
Pulse width 5.0μs,
single shot.
Parameter
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
V
(BR)ECS
Emitter-to-Collector Breakdown Voltage
20
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage----
V
CE(on)
Collector-to-Emitter Saturation Voltage
Min. Typ. Max. Units
600
----
----
0.70
----
1.7
----
2.2
----
1.9
3.0
----
-12
9.2
12
----
----
----
----
----
----
Conditions
V
GE
= 0V, I
C
= 250μA
V
GE
= 0V, I
C
= 1.0A
V
GE
= 0V, I
C
= 1.0mA
I
C
= 27A
I
C
= 49A
I
C
= 27A, T
J
= 150°C
V
CE
= V
GE
, I
C
= 250μA
----
----
----
2.0
----
----
5.5
---- mV/°C V
CE
= V
GE
, I
C
= 250μA
----
S
V
CE
= 100V, I
C
= 27A
250
μA
V
GE
= 0V, V
CE
= 600V
1000
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
±100
nA
V
GE
= ±20V
V
V
V/°C
V
GE
= 15V
See Fig. 2, 5
V
V
GE(th)
V
GE(th)
/
T
J
Temperature Coeff. of Threshold Voltage ----
g
fe
Forward Transconductance
I
CES
Zero Gate Voltage Collector Current
Gate Threshold Voltage
I
GES
Gate-to-Emitter Leakage Current
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
相關(guān)PDF資料
PDF描述
IRGPC40MD2 Insulated Gate Bipolar Transistors (IGBTs)(短路額定快速絕緣柵型雙極型晶體管)
IRGPC40M Insulated Gate Bipolar Transistors (IGBTs)(短路額定快速絕緣柵型雙極型晶體管)
IRGPC40U Insulated Gate Bipolar Transistors (IGBTs)(超快速絕緣柵型雙極型晶體管)
IRGPC50KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRGPC50FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V,Ic=39A)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRGPC40FD2 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=27A)
IRGPC40K 制造商:未知廠家 制造商全稱:未知廠家 功能描述:
IRGPC40KD2 制造商:IRF 制造商全稱:International Rectifier 功能描述:Fit Rate / Equivalent Device Hours
IRGPC40M 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=24A)
IRGPC40MD2 制造商:IRF 制造商全稱:International Rectifier 功能描述:Fit Rate / Equivalent Device Hours
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