- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377520 > IRGPC50MD2 (International Rectifier) Insulated Gate Bipolar Transistors (IGBTs)(短路額定超快速絕緣柵型雙極型晶體管) PDF資料下載
參數(shù)資料
| 型號： | IRGPC50MD2 |
| 廠商： | International Rectifier |
| 英文描述： | Insulated Gate Bipolar Transistors (IGBTs)(短路額定超快速絕緣柵型雙極型晶體管) |
| 中文描述： | 絕緣門雙極晶體管（IGBTs）（短路額定超快速絕緣柵型雙極型晶體管） |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 148K |
| 代理商： | IRGPC50MD2 |
IRGPC50MD2
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Repetitive rating; V
GE
=20V, pulse width limited
by max. junction temperature. ( See fig. 20 )
Notes:
----
Parameter
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
600
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage----
V
CE(on)
Collector-to-Emitter Saturation Voltage
Min. Typ. Max. Units
----
0.62
----
1.8
----
2.3
----
2.0
3.0
----
-14
11
20
----
----
----
----
----
1.3
----
1.2
----
----
Conditions
V
GE
= 0V, I
C
= 250μA
V
GE
= 0V, I
C
= 1.0mA
I
C
= 35A
I
C
= 60A
I
C
= 35A, T
J
= 150°C
V
CE
= V
GE
, I
C
= 250μA
----
----
2.0
----
----
5.5
---- mV/°C V
CE
= V
GE
, I
C
= 250μA
----
S
V
CE
= 100V, I
C
= 35A
250
μA
V
GE
= 0V, V
CE
= 600V
6500
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
1.7
V
I
C
= 25A
1.5
I
C
= 25A, T
J
= 150°C
±100
nA
V
GE
= ±20V
V
V/°C
V
GE
= 15V
See Fig. 2, 5
V
V
GE(th)
V
GE(th)
/
T
J
Temperature Coeff. of Threshold Voltage ----
g
fe
Forward Transconductance
I
CES
Zero Gate Voltage Collector Current
Gate Threshold Voltage
V
FM
Diode Forward Voltage Drop
See Fig. 13
I
GES
Gate-to-Emitter Leakage Current
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Total Gate Charge (turn-on)
Q
ge
Gate - Emitter Charge (turn-on)
Q
gc
Gate - Collector Charge (turn-on)
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
ts
Total Switching Loss
t
sc
Short Circuit Withstand Time
Min. Typ. Max. Units
----
120
----
25
----
40
----
78
----
110
----
340
----
265
----
2.1
----
4.0
----
6.1
10
----
Conditions
I
C
= 35A
V
CC
= 400V
See Fig. 8
T
J
= 25°C
I
C
= 35A, V
CC
= 480V
V
GE
= 15V, R
G
= 5.0
Energy losses include "tail" and
diode reverse recovery.
See Fig. 9, 10, 11, 18
180
38
60
----
----
510
400
----
----
9.5
----
nC
ns
mJ
μs
V
CC
= 360V, T
J
= 125°C
V
GE
= 15V, R
G
= 5.0
, V
CPK
< 500V
T
J
= 150°C, See Fig. 9, 10, 11, 18
I
C
= 35A, V
CC
= 480V
V
GE
= 15V, R
G
= 5.0
Energy losses include "tail" and
diode reverse recovery.
Measured 5mm from package
V
GE
= 0V
V
CC
= 30V
See Fig. 7
= 1.0MHz
T
J
= 25°C See Fig.
T
J
= 125°C 14 I
F
= 25A
T
J
= 25°C See Fig.
T
J
= 125°C 15 V
R
= 200V
T
J
= 25°C See Fig.
T
J
= 125°C 16 di/dt = 200A/
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
t
rr
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
80
110
610
440
9.4
13
2900
230
30
50
105
4.5
8.0
112
420 1200
----
----
----
----
----
----
----
----
----
75
160
10
15
375
ns
mJ
nH
pF
ns
I
rr
Diode Peak Reverse Recovery Current
A
Q
rr
Diode Reverse Recovery Charge
nC
μs
----
di
(rec)M
/dtDiode Peak Rate of Fall of Recovery ----
T
J
= 25°C See Fig.
T
J
= 125V
CC
=80%(V
CES
), V
GE
=20V, L=10μH,
R
G
= 5.0
, ( See fig. 19 )
250
160
A/μs
During t
b
----
Pulse width
≤
80μs; duty factor
≤
0.1%.
Pulse width 5.0μs,
single shot.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRGPC50M | Insulated Gate Bipolar Transistors (IGBTs)(短路額定超快速絕緣柵型雙極型晶體管) |
| IRGPC50S | Insulated Gate Bipolar Transistors (IGBTs)(標(biāo)準(zhǔn)速度絕緣柵型雙極型晶體管) |
| IRGPF30F | Insulated Gate Bipolar Transistors (IGBTs)(快速絕緣柵型雙極型晶體管) |
| IRGPF40F | Insulated Gate Bipolar Transistors (IGBTs)(快速絕緣柵型雙極型晶體管) |
| IRGPH20 | INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=4.5A) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRGPC50S | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Fit Rate / Equivalent Device Hours |
| IRGPC50U | 制造商:IR 功能描述:_ |
| IRGPC50UD2 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=27A) |
| IRGPC56 | 制造商:International Rectifier 功能描述: |
| IRGPC60K | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。