參數(shù)資料
型號: IRGPH40FD2
廠商: International Rectifier
英文描述: INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=1200V, @Vge=15V, Ic=17A)
中文描述: 絕緣柵雙極型晶體管,超快軟恢復(fù)(VCES和\u003d 1200伏,@和VGE \u003d 15V的,集成電路\u003d 17A條)
文件頁數(shù): 5/6頁
文件大?。?/td> 255K
代理商: IRGPH40FD2
C-277
IRGPH40F
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
Fig. 10
- Typical Switching Losses vs.
Case Temperature
0
400
800
1200
1600
2000
2400
1
10
100
C
V , Collector-to-Emitter Voltage (V)
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
C
ies
C
res
C
oes
0
4
8
12
16
20
0
10
Q , Total Gate Charge (nC)
20
30
40
50
G
V
V = 400V
I = 17A
0.1
1
10
100
-60
-40
-20
T , Case Temperature (°C)
0
20
40
60
80
100
120 140
160
T
I = 34A
I = 17A
I = 8.5A
R = 10
V = 15V
V = 960V
4.0
4.2
4.4
4.6
4.8
0
10
20
30
40
50
60
T
R , Gate Resistance ( )
W
V = 960V
V = 15V
T = 25°C
I = 17A
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