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參數(shù)資料
| 型號： | IRGS14C40L |
| 廠商： | International Rectifier |
| 英文描述： | Ignition IGBT(點(diǎn)火線圈絕緣柵雙極型晶體管) |
| 中文描述： | 點(diǎn)火IGBT（點(diǎn)火線圈絕緣柵雙極型晶體管） |
| 文件頁數(shù)： | 2/11頁 |
| 文件大?。?/td> | 155K |
| 代理商： | IRGS14C40L |
Off-State Electrical Charasteristics @ T
J
= 25°C
(unless otherwise specified)
Parameter
Collector-to-Emitter Breakdown Voltage
BV
GES
Gate-to-Emitter Breakdown Voltage
I
CES
Collector-to-Emitter Leakage Current
Min Typ Max
370
400
10
12
Unit
V
V
Conditions
Fig
BV
CES
430
R
G
= 1K ohm, I
C
=7A, V
GE
= 0V
I
G
=2m A
R
G
=1K ohm, V
CE
= 250V
R
G
=1K ohm, V
CE
= 250V, T
J
=150
°
C
I
C
= -10m A
15
100
μA
μA
V
ohm
K ohm
BV
CER
Emitter-to-Collector Breakdown Voltage
R
1
Gate Series Resistance
R
2
Gate-to-Emitter Resistance
24
28
75
20
10
30
On-State Electrical Charasteristics @ T
J
= 25
°
C
(unless otherwise specified)
Parameter
Min Typ Max
Unit
Conditions
Fig
1.2
1.35 1.55
1.35 1.55
1.5
1.55 1.75
1.6
1.40
I
C
= 7A, V
GE
= 4.5V
I
C
= 10A, V
GE
= 4.5V
I
C
= 10A, V
GE
= 4.5V, T
C
= -40
o
C
I
C
= 14A, V
GE
= 5.0V, T
C
= -40
o
C
I
C
= 14A, V
GE
= 5.0V
I
C
= 14A, V
GE
= 5.0V, T
C
=150
o
C
V
CE
= V
GE
, I
C
= 1 m A, T
C
=25
o
C
V
CE
= V
GE
, I
C
= 1 m A, T
C
=150
o
C
V
CE
= 25V, I
C
= 10A, T
C
=25
o
C
V
CE(on)
Collector-to-Emitter Saturation
Voltage
V
1
2
4
1.7
1.8
V
GE(th)
Gate Threshold Voltage
1.3
0.75
10
1.8
2.2
1.8
19
V
3, 5
8
g
fs
Transconductance
15
S
I
C
Collector Current
20
A
V
CE
= 10V, V
GE
= 4.5V
Switching Characteristics @ T
J
= 25
°
C
(unless otherwise specified)
Parameter
Min Typ Max
Unit
Conditions
Fig
Q
g
Q
ge
Q
gc
Total Gate charge
Gate - Emitter Charge
Gate - Collector Charge
Turn - on delay time
Rise time
Turn - off delay time
27
2.5
10
0.9
2.8
6
I
C
= 10A, V
CE
=12V, V
GE
=5V
I
C
= 10A, V
CE
=12V, V
GE
=5V
I
C
= 10A, V
CE
=12V, V
GE
=5V
7
nC
15
t
d
(on)
t
r
t
d
(off)
0.6
1.6
3.7
1.35
4
8.3
V
GE
=5V, R
G
=1K ohm, L=1mH, V
CE
=14V
V
GE
=5V, R
G
=1K ohm, L=1mH, V
CE
=14V
V
GE
=5V, R
G
=1K ohm, L=1mH, V
CE
=300V
12
14
μs
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
550
100
12
825
150
18
V
GE
=0V, V
CE
=25V, f=1M H z
V
GE
=0V, V
CE
=25V, f=1M H z
V
GE
=0V, V
CE
=25V, f=1M H z
pF
6
25
15.5
11.5
16.5
7.5
6
L=0.7m H, T
C
=25
°
C
L=2.2m H, T
C
=25
°
C
L=4.7m H, T
C
=25
°
C
L=1.5m H, T
C
=150
°
C
L=4.7m H, T
C
=150
°
C
L=8.7m H, T
C
=150
°
C
T
J
=150
o
C,
V
CC
= 16V, L = 10μH
R
G
= 1K ohm, V
GE
= 5V
I
L
Self-Clamped
Inductive Switching Current
A
9
10
13
14
t
SC
Short Circuit Withstand Time
120
μs
14
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRGS14C40LPBF | 功能描述:IGBT 晶體管 430V LOW-VCEON DISCRETE IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IRGS14C40LPBF-EL | 制造商:International Rectifier 功能描述: |
| IRGS14C40LTRL | 制造商:International Rectifier 功能描述:IGBT TRANSISTOR COLLECTOR EMITTER VOLTAG |
| IRGS14C40LTRLP | 功能描述:IGBT 模塊 RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| IRGS14C40LTRR | 制造商:International Rectifier 功能描述:IGBT TRANSISTOR COLLECTOR EMITTER VOLTAG |
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