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參數(shù)資料
| 型號： | IRH7250SE |
| 廠商： | International Rectifier |
| 英文描述： | 200Volt, 0.10Ω, MEGA RAD HARD HEXFET TRANSISTOR(200V, 0.10Ω, MEGA抗輻射 HEXFET 晶體管) |
| 中文描述： | 200Volt，0.10Ω，美佳RAD數(shù)據(jù)通信硬的HEXFET晶體管（200V的電壓，0.10Ω，美佳抗輻射的HEXFET晶體管） |
| 文件頁數(shù)： | 5/8頁 |
| 文件大小： | 147K |
| 代理商： | IRH7250SE |
IRH7250SE Devices
www.irf.com
5
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
0
1000
2000
3000
4000
5000
6000
V , Drain-to-Source Voltage (V)
C
V
C
C
C
=
=
=
=
0V,
C
C
C
ds
f = 1MHz
+ C
gd ,
+ C
C SHORTED
GS
iss
rss
oss
gs
gd
gd
C
iss
C
oss
C
rss
1
10
100
1000
0.4
0.8
1.2
1.6
2.0
2.4
V ,Source-to-Drain Voltage (V)
I
S
V = 0 V
T = 25 C
°
T = 150 C
°
1
10
100
1000
1
10
100
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150°
= 25°
J
C
V , Drain-to-Source Voltage (V)
D
I
10us
100us
1ms
10ms
Pre-Irradiation
0
40
80
120
160
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V
G
FOR TEST CIRCUIT
SEE FIGURE
I =
13
26A
V
= 40V
DS
V
= 100V
DS
V
= 160V
DS
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