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參數(shù)資料
| 型號： | IRHE3230 |
| 廠商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18) |
| 中文描述： | 抗輻射功率MOSFET表面貼裝（持有LCC - 18） |
| 文件頁數(shù)： | 3/12頁 |
| 文件大?。?/td> | 269K |
| 代理商： | IRHE3230 |
www.irf.com
3
Radiation Characteristics
IRHE7230, JANSR2N7262U
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter
Min Max Min Max
BV
DSS
Drain-to-Source Breakdown Voltage 200 — 200 — V V
GS
= 0V, I
D
= 1.0mA
V
GS(th)
Gate Threshold Voltage
2.0 4.0 1.25 4.5
I
GSS
Gate-to-Source Leakage Forward
— 100 — 100 nA
I
GSS
Gate-to-Source Leakage Reverse
— -100 — -100
I
DSS
Zero Gate Voltage Drain Current
— 25 — 50 μA V
DS
=160V, V
GS
=0V
R
DS(on)
Static Drain-to-Source
— 0.35 — 0.48
V
GS
= 12V, I
D
=3.5A
On-State Resistance (TO-3)
R
DS(on)
Static Drain-to-Source
— 0.35 — 0.48
V
GS
= 12V, I
D
=3.5A
On-State Resistance (LCC-18)
V
SD
Diode Forward Voltage
— 1.4 — 1.4 V V
GS
= 0V, IS = 5.5A
100K Rads(Si)
1
600 to 1000K Rads (Si)
2
Units
Test Conditions
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20 V
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
1. Part number IRHE7230 (JANSR2N7262U)
2. Part numbers IRHE3230 (JANSF2N7262U), IRHE4230 (JANSG2N7262U) and IRHE8230 (JANSH2N7262U)
Fig a.
Single Event Effect, Safe Operating Area
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
0
50
100
150
200
0
-5
-10
-15
-20
VGS
V
Cu
Br
Ion
MeV/(mg/cm
2
)) (MeV) (μm)
@
V
GS
=0V @
V
GS
=-5V @
V
GS
=-10V @
V
GS
=-15V @
V
GS
=-20V
Cu
28
285 43 190 180 170 125
—
Br
36.8
305 39 100 100 100 50
—
LET
Energy Range
V
DS(V)
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相關(guān)代理商/技術(shù)參數(shù) |
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