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參數(shù)資料
| 型號： | IRHF58130PBF |
| 元件分類： | JFETs |
| 英文描述： | 11.7 A, 100 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 封裝： | HERMETIC SEALED, MODIFIED TO-39, 3 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 128K |
| 代理商： | IRHF58130PBF |
www.irf.com
3
Radiation Characteristics
IRHF57130, JANSR2N7493T2
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter
Up to 500K Rads(Si)
1
1000K Rads (Si)
2
Units
Test Conditions
Min Max Min Max
BV
DSS
Drain-to-Source Breakdown Voltage 100 — 100 — V V
GS
= 0V, I
D
= 1.0mA
V
GS(th)
Gate Threshold Voltage
2.0 4.0 1.5 4.0
I
GSS
Gate-to-Source Leakage Forward
— 100 — 100 nA
I
GSS
Gate-to-Source Leakage Reverse
— -100 — -100
I
DSS
Zero Gate Voltage Drain Current
— 10 — 25 μA
R
DS(on)
Static Drain-to-Source
— 0.064 — 0.08
V
GS
= 12V, I
D
=7.4A
On-State Resistance (TO-3)
R
DS(on)
Static Drain-to-Source
— 0.08 — 0.10
V
GS
= 12V, I
D
=7.4A
On-State Resistance (TO-39)
V
SD
Diode Forward Voltage
— 1.5 — 1.5 V
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20 V
V
DS
= 80V, V
GS
=0V
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
1. Part numbers IRHF57130 (JANSR2N7493T2), IRHF53130 (JANSF2N7493T2) and IRHF54130 (JANSG2N7493T2)
2. Part number IRHF58130 (JANSH2N7493T2)
Fig a.
Single Event Effect, Safe Operating Area
V
GS
= 0V, IS = 11.7A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
Table 2. Single Event Effect Safe Operating Area
Ion
(MeV/(mg/cm
2
)) (MeV) (μm)
@V
GS
=0V @V
GS
=-5V @V
GS
=-10V @V
GS
=-15V @V
GS
=-20V
Br
36.7
309 39.5 100 100 100 100 100
I
59.8
341 32.5 100 100 100 35 25
Au
82.3
350 28.4 100 100 80
LET
Energy Range
V
DS
(V)
25 —
0
20
40
60
80
100
120
-20
-15
-10
-5
0
VGS
V
Br
I
Au
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