參數(shù)資料
型號(hào): IRHF58130PBF
元件分類: JFETs
英文描述: 11.7 A, 100 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
封裝: HERMETIC SEALED, MODIFIED TO-39, 3 PIN
文件頁(yè)數(shù): 7/8頁(yè)
文件大?。?/td> 128K
代理商: IRHF58130PBF
www.irf.com
7
Pre-Irradiation
IRHF57130, JANSR2N7493T2
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3
μ
F
50K
.2
μ
F
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
Fig 13b.
Gate Charge Test Circuit
Fig 13a.
Basic Gate Charge Waveform
Fig 12c.
Maximum Avalanche Energy
Vs. Drain Current
Fig 12b.
Unclamped Inductive Waveforms
Fig 12a.
Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
t
p
D.U.T
L
VDS
-V
DD
DRIVER
A
15V
20V
GS
25
50
75
100
125
150
0
80
160
240
320
400
Starting T , Junction Temperature ( C)
E
A
ID
5.2A
7.4A
11.7A
TOP
BOTTOM
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