- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377521 > IRHF7330SE (International Rectifier) N-Channel Single Event Effect (SEE) Rad Hard HEXFET Transistor(N 溝道 單事件效應(yīng) Rad Hard HEXFET技術(shù)晶體管) PDF資料下載
參數(shù)資料
| 型號： | IRHF7330SE |
| 廠商： | International Rectifier |
| 英文描述： | N-Channel Single Event Effect (SEE) Rad Hard HEXFET Transistor(N 溝道 單事件效應(yīng) Rad Hard HEXFET技術(shù)晶體管) |
| 中文描述： | N通道單粒子效應(yīng)（見）拉德硬的HEXFET晶體管（不適用溝道單事件效應(yīng)拉德硬盤的HEXFET技術(shù)晶體管） |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 94K |
| 代理商： | IRHF7330SE |
Product Summary
Part Number
BV
DSS
R
DS(on)
I
D
IRHF7330SE
400V
1.2
3.0A
Features:
n
Radiation Hardened up to 1 x 10
5
Rads (Si)
n
Single Event Burnout (SEB) Hardened
n
Single Event Gate Rupture (SEGR) Hardened
n
Gamma Dot (Flash X-Ray) Hardened
n
Neutron Tolerant
n
Identical Pre- and Post-Electrical Test Conditions
n
Repetitive Avalanche Rating
n
Dynamic dv/dt Rating
n
Simple Drive Requirements
n
Ease of Paralleling
n
Hermetically Sealed
n
Electrically Isolated
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
IRHF7330SE
3.0
1.9
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
12
25
0.2
±20
140
3.0
2.5
6.7
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 (0.063 in. (1.6mm) from
case for 10 sec.)
0.98 (typical)
Weight
g
N-CHANNEL
SINGLE EVENT EFFECT (SEE) RAD HARD
PD - 91864
Pre-Irradiation
400Volt, 1.2
, SEE RAD HARD HEXFET
International Rectifier’s SEE RAD HARD technology
HEXFETs demonstrate immunity to SEE failure. Ad-
ditionally, under
identical
pre- and post-irrradiation
test conditions, International Rectifier’s RAD HARD
HEXFETs retain
identical
electrical specifications up
to 1 x 10
5
Rads (Si) total dose. No compensation in
gate drive circuitry is required. These devices are also
capable of surviving transient ionization pulses as high
as 1 x 10
12
Rads (Si)/Sec, and return to normal op-
eration within a few microseconds. Since the SEE pro-
cess utilizes International Rectifier’s patented HEXFET
technology, the user can expect the highest quality
and reliability in the industry.
RAD HARD HEXFET transistors also feature all of
the well-established advantages of MOSFETs, such
as voltage control, very fast switching, ease of paral-
leling and temperature stability of the electrical pa-
rameters. They are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits in space and weapons environments.
o
C
A
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET
TRANSISTOR
IRHF7330SE
2/26/99
www.irf.com
1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRHF7430SE | N-Channel Single Event Effect (SEE) Rad Hard HEXFET Transistor(N 溝道 單事件效應(yīng) Rad Hard HEXFET技術(shù)晶體管) |
| IRHF8110 | RADIATION HARDENED POWER MOSFET THRU-HOLE |
| IRHF3110 | RADIATION HARDENED POWER MOSFET THRU-HOLE |
| IRHF4110 | RADIATION HARDENED POWER MOSFET THRU-HOLE |
| IRHF7110 | RADIATION HARDENED POWER MOSFET THRU-HOLE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRHF7330SESCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHF7330SESCV | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHF7430SE | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHF7430SESCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHF7430SESCV | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。