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參數(shù)資料
| 型號(hào)： | IRHF9230 |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Transistor(HEXFET 晶體管) |
| 中文描述： | 的HEXFET晶體管（之HEXFET晶體管） |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 121K |
| 代理商： | IRHF9230 |
IRHF9230, JANSR2N7390 Device
www.irf.com
3
Table 1. Low Dose Rate
Parameter
IRHF9230
100K Rads (Si)
Min
-200
-2.0
—
—
—
—
Units
Test Conditions
Max
—
-4.0
-100
100
-25
0.8
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)1
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance One
Diode Forward Voltage
V
V
GS
= 0V, I
D
= -1.0mA
V
GS
= V
DS
, I
D
= -1.0mA
V
GS
= -20V
V
GS
= 20V
V
DS
=0.8 x Max Rating, V
GS
=0V
V
GS
= -12V, I
D
=-2.4A
nA
μA
W
V
SD
—
-5.0
V
TC = 25°C, IS = -4.0A,V
GS
= 0V
Radiation Performance of P-Channel Rad
Hard HEXFETs
Radiation Characteristics
Table 2. High Dose Rate
10
11
Rads (Si)/sec 10
12
Rads (Si)/sec
Min Typ Max
—
—
-160
Parameter
Drain-to-Source Voltage
Min Typ Max
Units
—
—
-160
Test Conditions
V
DSS
V
Applied drain-to-source voltage during
gamma-dot
Peak radiation induced photo-current
-160 A/μsec Rate of rise of photo-current
—
μH
Circuit inductance required to limit di/dt
IPP
di/dt
L1
—
—
27
-100
—
—
—
—
—
0.5
-100
—
—
—
A
-800
—
Table 3. Single Event Effects
LET (Si)
Fluence Range V
DS
Bias V
GS
Bias
Ion
(MeV/mg/cm
2
) (ions/cm
2
) (μm) (V) (V)
Cu 28
3x 10
5
~43 -200
5
International Rectifier Radiation Hardened HEXFETs
are tested to verify their hardness capability. The hard-
ness assurance program at International Rectifier com-
prises three radiation environments.
Every manufacturing lot is tested in a low dose rate
(total dose) environment per MIL-STD-750, test method
1019 condition A. International Rectifier has imposed
a standard gate condition of -12 volts per note 5 and a
V
bias condition equal to 80% of the device rated
voltage per note 6. Pre- and post- irradiation limits of
the devices irradiated to 1 x 10
5
Rads (Si) are identical
and are presented in Table 1, column 1, IRHF9230.
The values in Table 1 will be met for either of the two
low dose rate test circuits that are used. Both pre- and
post-irradiation performance are tested and specified
using the same drive circuitry and test conditions in
order to provide a direct comparison.
High dose rate testing may be done on a special re-
quest basis using a dose rate up to 1 x 10
12
Rads (Si)/
Sec (See Table 2).
International Rectifier radiation hardened P-Channel
HEXFETs are considered to be neutron-tolerant, as
stated in MIL-PRF-19500 Group D. International Rec-
tifier radiation hardened P-Channel HEXFETs have
been characterized in heavy ion Single Event Effects
(SEE) environments. Single Event Effects character-
ization is shown in Table 3.
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