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參數(shù)資料
| 型號： | IRHMS57264SE |
| 廠商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 250V, N-CHANNEL |
| 中文描述： | 抗輻射功率MOSFET的通孔（低阻值到254AA）250V，N溝道 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 183K |
| 代理商： | IRHMS57264SE |
IRHMS57264SE, JANSR2N7477T1
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Pre-Irradiation
2
www.irf.com
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
Thermal Resistance
Parameter
Min Typ Max
Units
Test Conditions
RthJC
RthCS
RthJA
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
—
—
—
—
0.21
—
0.60
—
48
°C/W
Typical socket mount
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ
Max Units
Test Conditions
IS
ISM
VSD
trr
QRR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
—
—
—
—
37
148
1.2
560
8.2
V
ns
μ
C
T
j
= 25°C, IS = 37A, VGS = 0V
Tj = 25°C, IF = 37A, di/dt
≤
100A/
μ
s
VDD
≤
50V
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Parameter
Drain-to-Source Breakdown Voltage
BVDSS/
TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
250
—
Typ
—
0.29
Max Units
—
—
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
BVDSS
V
V/°C
—
—
0.061
VGS = 12V, ID = 23.5A
2.5
27
—
—
—
—
—
—
4.5
—
10
25
V
VDS = VGS, ID = 1.0mA
VDS = 15V, IDS = 23.5A
VDS= 200V ,VGS=0V
VDS = 200V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 37A
VDS = 125V
S (
)
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
100
-100
165
45
75
35
125
80
65
— nH
Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
nC
VDD = 125V, ID = 37A
VGS =12V, RG = 2.35
bonded from Source Pin to Drain Pad
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Internal Gate Resistance
—
—
—
—
5410
770
36
1.2
—
—
—
—
VGS = 0V, VDS = 25V
f = 1.0MHz
pF
f = 1.0MHz, open drain
nA
ns
μ
A
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