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參數(shù)資料
| 型號(hào)： | IRHMS57264SE |
| 廠商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 250V, N-CHANNEL |
| 中文描述： | 抗輻射功率MOSFET的通孔（低阻值到254AA）250V，N溝道 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 183K |
| 代理商： | IRHMS57264SE |
www.irf.com
3
Radiation Characteristics
IRHMS57264SE, JANSR2N777T1
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Fig a.
Single Event Effect, Safe Operating Area
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter
100K Rads (Si)
Min
250
2.0
—
—
—
Units
Test Conditions
Max
—
4.5
100
-100
10
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-3) — 0.061
Static Drain-to-Source On-state
Resistance (Low-Ohmic TO-254)
V
V
GS
= 0V, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20V
V
DS
= 200V, V
GS
=0V
nA
μA
V
GS
= 12V, I
D
= 23.5A
R
DS(on)
V
SD
Diode Forward Voltage
—
1.2
V
V
GS
= 0V, I
D
= 37A
— 0.061
V
GS
= 12V, I
D
= 23.5A
0
50
100
150
200
250
300
-20
-15
-10
-5
0
VGS
V
Br
I
Au
Table 2. Single Event Effect Safe Operating Area
Ion
MeV/(mg/cm
2
)) (MeV) (μm)
@V
=0V @V
=-5V @V
=-10V @V
=-15V @V
=-20V
Br
36.7
309 39.5 250 250 250 250 250
I
59.8
341 32.5 250 250 250 250 240
Au
82.3
350 28.4 250 250 225
LET
Energy Range
V
DS
(V)
175
80
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