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參數(shù)資料
| 型號(hào)： | IRHNA53160 |
| 廠商： | International Rectifier |
| 英文描述： | Surface Mount Radiation Hardened Power MOSFET(表貼型抗輻射功率MOS場(chǎng)效應(yīng)管) |
| 中文描述： | 表面安裝抗輻射功率MOSFET（表貼型抗輻射功率馬鞍山場(chǎng)效應(yīng)管） |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 101K |
| 代理商： | IRHNA53160 |
www.irf.com
5
IRHNA57160
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
0
2000
4000
6000
8000
10000
V , Drain-to-Source Voltage (V)
C
V
C
C
C
=
=
=
=
0V,
C
C
C
ds
f = 1MHz
+ C
gd ,
+ C
C SHORTED
GS
iss
rss
oss
gs
gd
gd
C
rss
C
oss
C
iss
0
40
Q , Total Gate Charge (nC)
80
120
160
200
0
4
8
12
16
20
V
G
FOR TEST CIRCUIT
SEE FIGURE
I =
13
75A
V
= 20V
DS
V
= 50V
DS
V
= 80V
DS
0.1
1
10
100
1000
0.2
0.6
1.0
1.4
1.8
V ,Source-to-Drain Voltage (V)
I
S
V = 0 V
T = 25 C
°
T = 150 C
Pre-Irradiation
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
ID
10us
100us
1ms
10ms
Tc = 25°C
Tj = 150°C
Single Pulse
OPERATION IN THIS AREA LIMITED
BY RDS(ON)
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PDF描述 |
|---|---|
| IRHNA57160 | Surface Mount Radiation Hardened Power MOSFET(表貼型抗輻射功率MOS場(chǎng)效應(yīng)管) |
| IRHNA58160 | Surface Mount Radiation Hardened Power MOSFET(表貼型抗輻射功率MOS場(chǎng)效應(yīng)管) |
| IRHNA54160 | Surface Mount Radiation Hardened Power MOSFET(表貼型抗輻射功率MOS場(chǎng)效應(yīng)管) |
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| IRHNA53163SE | 制造商:International Rectifier 功能描述:MOSFET, HIREL, SEE HARD, R5 - Bulk |
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| IRHNA53264SE | 制造商:International Rectifier 功能描述:MOSFET, HIREL, SEE HARD, R5 - Bulk |
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