| 型號(hào) | 廠商 | 描述 |
| irhn7230 2 3 4 5 6 7 8 9 10 11 12 13 14 |
International Rectifier | TRANSISTOR N-CHANNEL(BVdss=200V, Rds(on)=0.40ohm, Id=9.0A) |
| irhn8230 2 3 4 5 6 7 8 9 10 11 12 13 14 |
International Rectifier | TRANSISTOR N-CHANNEL(BVdss=200V, Rds(on)=0.40ohm, Id=9.0A) |
| irhn7250 2 3 4 5 6 7 8 9 10 11 12 |
International Rectifier | HEXFET Transistor(HEXFET 晶體管) |
| irhn8250 2 3 4 5 6 7 8 9 10 11 12 |
International Rectifier | HEXFET Transistor(HEXFET 晶體管) |
| irhn9130 2 3 4 5 6 7 8 |
International Rectifier | P-Channel,-100 Volt, 0.3Ω, RAD HARD HEXFET(P溝道,-100 V, 0.3Ω,抗輻射HEXFET晶體管) |
| irhn93130 2 3 4 5 6 7 8 |
International Rectifier | P-Channel,-100 Volt, 0.3Ω, RAD HARD HEXFET(P溝道,-100 V, 0.3Ω,抗輻射HEXFET晶體管) |
| irhn9230 2 3 4 |
International Rectifier | P-Channel RAD HARD HEXFET TRANSISTOR(P 溝道 Rad Hard 技術(shù) HEXFET晶體管) |
| irhn9250 2 3 4 5 6 7 8 |
International Rectifier | HEXFET Transistor(HEXFET 晶體管) |
| irhn93250 2 3 4 5 6 7 8 |
International Rectifier | HEXFET Transistor(HEXFET 晶體管) |
| irhna3160 2 3 4 5 6 7 8 |
International Rectifier | Surface Mount Power MOSFET(表貼型功率MOS場(chǎng)效應(yīng)管) |
| irhna4160 2 3 4 5 6 7 8 |
International Rectifier | Surface Mount Power MOSFET(表貼型功率MOS場(chǎng)效應(yīng)管) |
| irhna53160 2 3 4 5 6 7 8 |
International Rectifier | Surface Mount Radiation Hardened Power MOSFET(表貼型抗輻射功率MOS場(chǎng)效應(yīng)管) |
| irhna57160 2 3 4 5 6 7 8 |
International Rectifier | Surface Mount Radiation Hardened Power MOSFET(表貼型抗輻射功率MOS場(chǎng)效應(yīng)管) |
| irhna58160 2 3 4 5 6 7 8 |
International Rectifier | Surface Mount Radiation Hardened Power MOSFET(表貼型抗輻射功率MOS場(chǎng)效應(yīng)管) |
| irhna54160 2 3 4 5 6 7 8 |
International Rectifier | Surface Mount Radiation Hardened Power MOSFET(表貼型抗輻射功率MOS場(chǎng)效應(yīng)管) |
| irhna53260 2 3 4 5 6 7 8 |
International Rectifier | 200V, N-CHANNEL |
| irhna57060 2 3 4 5 6 7 8 |
International Rectifier | 200V, N-CHANNEL |
| irhna54260 2 3 4 5 6 7 8 |
International Rectifier | 200V, N-CHANNEL |
| irhna57260 2 3 4 5 6 7 8 |
International Rectifier | 200V, N-CHANNEL |
| irhna58260 2 3 4 5 6 7 8 |
International Rectifier | 200V, N-CHANNEL |
| irhna54z60 2 3 4 5 6 7 8 |
International Rectifier | 30V, N-Channel Surface Mount Radiation Hardened Power MOSFET(30V,表貼型抗輻射功率N溝道MOSFET) |
| irhna53z60 2 3 4 5 6 7 8 |
International Rectifier | 30V, N-Channel Surface Mount Radiation Hardened Power MOSFET(30V,表貼型抗輻射功率N溝道MOSFET) |
| irhna57z60 2 3 4 5 6 7 8 |
International Rectifier | 30V, N-Channel Surface Mount Radiation Hardened Power MOSFET(30V,表貼型抗輻射功率N溝道MOSFET) |
| irhna58z60 2 3 4 5 6 7 8 |
International Rectifier | 30V, N-Channel Surface Mount Radiation Hardened Power MOSFET(30V,表貼型抗輻射功率N溝道MOSFET) |
| irhna57264se 2 3 4 5 6 7 8 |
International Rectifier | Surface Mount (SMD-2) Radiation Hardened Power MOSFET(表貼型抗輻射功率MOSFET) |
| irhna593064 2 3 4 5 6 7 8 |
International Rectifier | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) |
| irhna597064 2 3 4 5 6 7 8 |
International Rectifier | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) |
| irhna593260 2 3 4 5 6 7 8 |
International Rectifier | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) |
| irhna597260 2 3 4 5 6 7 8 |
International Rectifier | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) |
| irhna63160 2 3 4 5 6 7 8 |
International Rectifier | RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-2), 100V, N-CHANNEL |
| irhna67160 2 3 4 5 6 7 8 |
International Rectifier | RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-2), 100V, N-CHANNEL |
| irhna7z60 2 3 4 5 6 7 8 |
International Rectifier | 30Volt, 0.009Ω, RAD HARD HEXFET(30V, 0.009Ω,抗輻射N溝道HEXFET晶體管) |
| irhna8z60 2 3 4 5 6 7 8 |
International Rectifier | 30Volt, 0.009Ω, RAD HARD HEXFET(30V, 0.009Ω,抗輻射N溝道HEXFET晶體管) |
| irhna9260 2 3 4 5 6 7 8 |
International Rectifier | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) |
| irhna93260 2 3 4 5 6 7 8 |
International Rectifier | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) |
| irhnb7260 2 3 4 5 6 7 8 |
International Rectifier | 200Volt,0.070Ω, N-Channel MEGA RAD HARD HEXFET(200V,0.070Ω,MEGA 抗輻射N溝道HEXFET晶體管) |
| irhnb8260 2 3 4 5 6 7 8 |
International Rectifier | 200Volt,0.070Ω, N-Channel MEGA RAD HARD HEXFET(200V,0.070Ω,MEGA 抗輻射N溝道HEXFET晶體管) |
| irhnb7264se 2 3 4 5 6 7 8 |
International Rectifier | 250Volt, 0.11Ω, (SEE) RAD HARD HEXFET(250V, 0.11Ω,單事件效應(yīng)抗輻射 HEXFET晶體管) |
| irhnb7z60 2 3 4 5 6 7 8 |
International Rectifier | 30Volt,0.009Ω,MEGA RAD HARD HEXFET(30V,0.009Ω,MEGA 抗輻射N溝道HEXFET晶體管) |
| irhnb8z60 2 3 4 5 6 7 8 |
International Rectifier | 30Volt,0.009Ω,MEGA RAD HARD HEXFET(30V,0.009Ω,MEGA 抗輻射N溝道HEXFET晶體管) |
| irhnj54z30 2 3 4 5 6 7 8 |
International Rectifier | 30V, N-Channel Surface Mount Radiation Hardened Power MOSFET(30V,表貼型抗輻射功率N溝道MOSFET) |
| irhnj53z30 2 3 4 5 6 7 8 |
International Rectifier | 30V, N-Channel Surface Mount Radiation Hardened Power MOSFET(30V,表貼型抗輻射功率N溝道MOSFET) |
| irhnj57z30 2 3 4 5 6 7 8 |
International Rectifier | 30V, N-Channel Surface Mount Radiation Hardened Power MOSFET(30V,表貼型抗輻射功率N溝道MOSFET) |
| irhnj57130 2 3 4 5 6 7 8 |
International Rectifier | Surface Mount Radiation Hardened Power MOSFET(表貼型抗輻射功率MOS場(chǎng)效應(yīng)管) |
| irhnj57230 2 3 4 5 6 7 8 |
International Rectifier | 200V, N-Channel Surface Mount Radiation Hardened Power MOSFET(200V,表貼型抗輻射功率N溝道MOS場(chǎng)效應(yīng)管) |
| irhnj63130 2 3 4 5 6 7 8 |
International Rectifier | 100V, N-CHANNEL |
| irhnj67130 2 3 4 5 6 7 8 |
International Rectifier | 100V, N-CHANNEL |
| irhq53110 2 3 4 5 6 7 8 |
International Rectifier | 30V N-Channel PowerTrench MOSFET |
| irhq57110 2 3 4 5 6 7 8 |
International Rectifier | 30V N-Channel PowerTrench MOSFET |
| irhq58110 2 3 4 5 6 7 8 |
International Rectifier | 30V N-Channel PowerTrench MOSFET |