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參數(shù)資料
| 型號： | IRHNA54260 |
| 廠商： | International Rectifier |
| 英文描述： | 200V, N-CHANNEL |
| 中文描述： | 為200V，N溝道 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 107K |
| 代理商： | IRHNA54260 |
www.irf.com
3
IRHNA57260
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter
Up to 600K Rads(Si)
1
1000K Rads (Si)
2
Units
Test Conditions
Min Max Min Max
BV
DSS
Drain-to-Source Breakdown Voltage 200 — 200 — V V
GS
= 0V, I
D
= 1.0mA
V
GS(th)
Gate Threshold Voltage
2.0 4.0 1.5 4.0
I
GSS
Gate-to-Source Leakage Forward
— 100 — 100 nA
I
GSS
Gate-to-Source Leakage Reverse
— -100 — -100
I
DSS
Zero Gate Voltage Drain Current
— 10 — 10 μA
R
DS(on)
Static Drain-to-Source
— 0.039 — 0.044
V
GS
= 12V, I
D
=35A
On-State Resistance (TO-3)
R
DS(on)
Static Drain-to-Source
— 0.038 — 0.043
V
GS
= 12V, I
D
=35A
On-State Resistance (SMD-2)
V
SD
Diode Forward Voltage
— 1.2 — 1.2 V
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20 V
V
DS
=160V, V
GS
=0V
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Radiation Characteristics
1. Part numbers IRHNA57260, IRHNA53260 and IRHNA54260
2. Part number IRHNA58260
Fig a.
Single Event Effect, Safe Operating Area
V
GS
= 0V, IS = 55A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
Table 2. Single Event Effect Safe Operating Area
Ion
MeV/(mg/cm
2
)) (MeV) (μm)
@V
=0V @V
=-5V @V
=-10V @V
=-15V @V
=-20V
Br
36.7
309 39.5 200 200 150 100 50
I
59.8
341 32.5 200 100 40 35 30
Au
82.3
350 28.4 50 35 25
LET
Energy Range
V
DS
(V)
— —
0
50
100
150
200
250
0
-5
-10
-15
-20
VGS
V
Br
I
Au
相關PDF資料 |
PDF描述 |
|---|---|
| IRHNA57260 | 200V, N-CHANNEL |
| IRHNA58260 | 200V, N-CHANNEL |
| IRHNA54Z60 | 30V, N-Channel Surface Mount Radiation Hardened Power MOSFET(30V,表貼型抗輻射功率N溝道MOSFET) |
| IRHNA53Z60 | 30V, N-Channel Surface Mount Radiation Hardened Power MOSFET(30V,表貼型抗輻射功率N溝道MOSFET) |
| IRHNA57Z60 | 30V, N-Channel Surface Mount Radiation Hardened Power MOSFET(30V,表貼型抗輻射功率N溝道MOSFET) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IRHNA54Z60 | 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R5 - Bulk |
| IRHNA57060 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:200V, N-CHANNEL |
| IRHNA57064 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) |
| IRHNA57064/SLDC/BAE | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 60V 75A 3SMD-2 SLDC FOR BAE - Virtual or Non-Physical Inventory (Software & Literature) |
| IRHNA57160 | 制造商:International Rectifier 功能描述:100V 51.000A HEXFET RADHARD - Bulk |
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