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參數(shù)資料
| 型號： | IRHNA54Z60 |
| 廠商： | International Rectifier |
| 英文描述： | 30V, N-Channel Surface Mount Radiation Hardened Power MOSFET(30V,表貼型抗輻射功率N溝道MOSFET) |
| 中文描述： | 30V的N通道表面安裝抗輻射功率MOSFET（30V的，表貼型抗輻射功率?溝道MOSFET的） |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 105K |
| 代理商： | IRHNA54Z60 |
www.irf.com
3
IRHNA57Z60
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter
Up to 600K Rads(Si)
1
1000K Rads (Si)
2
Units
Test Conditions
Min Max Min Max
BV
DSS
Drain-to-Source Breakdown Voltage 30 — 30 — V V
GS
= 0V, I
D
= 1.0mA
V
GS(th)
Gate Threshold Voltage
2.0 4.0 1.5 4.0
I
GSS
Gate-to-Source Leakage Forward
— 100 — 100 nA
I
GSS
Gate-to-Source Leakage Reverse
— -100 — -100
I
DSS
Zero Gate Voltage Drain Current
— 10 — 10 μA
R
DS(on)
Static Drain-to-Source
— 0.004 — 0.005
V
GS
= 12V, I
D
=45A
On-State Resistance (TO-3)
R
DS(on)
Static Drain-to-Source
— 0.0035 — 0.004
V
GS
= 12V, I
D
=45A
On-State Resistance (SMD-2)
V
SD
Diode Forward Voltage
— 1.3 — 1.3 V
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20 V
V
DS
=24V, V
GS
=0V
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Radiation Characteristics
1. Part numbers IRHNA57Z60, IRHNA53Z60 and IRHNA54Z60
2. Part number IRHNA58Z60
Fig a.
Single Event Effect, Safe Operating Area
V
GS
= 0V, IS = 45A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
0
5
10
15
20
25
30
35
0
-5
-10
-15
-20
VGS
V
Br
I
AU
Table 2. Single Event Effect Safe Operating Area
Ion
MeV/(mg/cm
2
)) (MeV) (μm)
@V
=0V @V
=-5V @V
=-10V @V
=-15V @V
=-20V
Br
37.9
255 33.4 30 30 30 25 20
I
59.4
290 28.8 25 25 20 15 10
Au
80.3
313 26.5 22.5 22.5 15
LET
Energy Range
V
DS
(V)
10
—
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRHNA53Z60 | 30V, N-Channel Surface Mount Radiation Hardened Power MOSFET(30V,表貼型抗輻射功率N溝道MOSFET) |
| IRHNA57Z60 | 30V, N-Channel Surface Mount Radiation Hardened Power MOSFET(30V,表貼型抗輻射功率N溝道MOSFET) |
| IRHNA58Z60 | 30V, N-Channel Surface Mount Radiation Hardened Power MOSFET(30V,表貼型抗輻射功率N溝道MOSFET) |
| IRHNA57264SE | Surface Mount (SMD-2) Radiation Hardened Power MOSFET(表貼型抗輻射功率MOSFET) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRHNA57060 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:200V, N-CHANNEL |
| IRHNA57064 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) |
| IRHNA57064/SLDC/BAE | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 60V 75A 3SMD-2 SLDC FOR BAE - Virtual or Non-Physical Inventory (Software & Literature) |
| IRHNA57160 | 制造商:International Rectifier 功能描述:100V 51.000A HEXFET RADHARD - Bulk |
| IRHNA57163SE | 制造商:International Rectifier 功能描述:MOSFET, HIREL, SEE HARD, R5 - Bulk |
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