- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377522 > IRHNA58Z60 (International Rectifier) 30V, N-Channel Surface Mount Radiation Hardened Power MOSFET(30V,表貼型抗輻射功率N溝道MOSFET) PDF資料下載
參數(shù)資料
| 型號： | IRHNA58Z60 |
| 廠商： | International Rectifier |
| 英文描述： | 30V, N-Channel Surface Mount Radiation Hardened Power MOSFET(30V,表貼型抗輻射功率N溝道MOSFET) |
| 中文描述： | 30V的N通道表面安裝抗輻射功率MOSFET（30V的，表貼型抗輻射功率?溝道MOSFET的） |
| 文件頁數(shù)： | 7/8頁 |
| 文件大?。?/td> | 105K |
| 代理商： | IRHNA58Z60 |
www.irf.com
7
IRHNA57Z60
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3
μ
F
50K
.2
μ
F
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
12 V
Fig 13b.
Gate Charge Test Circuit
Fig 13a.
Basic Gate Charge Waveform
Fig 12c.
Maximum Avalanche Energy
Vs. Drain Current
Fig 12b.
Unclamped Inductive Waveforms
Fig 12a.
Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
12V
.
Pre-Irradiation
25
50
75
100
125
150
0
200
400
600
800
1000
1200
Starting T , Junction Temperature( C)
E
ID
34A
47A
75A
TOP
BOTTOM
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRHNA57264SE | Surface Mount (SMD-2) Radiation Hardened Power MOSFET(表貼型抗輻射功率MOSFET) |
| IRHNA593064 | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) |
| IRHNA597064 | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) |
| IRHNA593260 | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) |
| IRHNA597260 | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRHNA58Z60SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHNA593064 | 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R5 - Bulk |
| IRHNA593064SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHNA593064SCV | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHNA593160 | 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R5 - Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復。