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參數(shù)資料
| 型號(hào)： | IRHNA593064 |
| 廠商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) |
| 中文描述： | 抗輻射功率MOSFET表面貼裝系統(tǒng)（SMD - 2） |
| 文件頁(yè)數(shù)： | 5/8頁(yè) |
| 文件大小： | 226K |
| 代理商： | IRHNA593064 |
www.irf.com
5
Pre-Irradiation
IRHNA597064
Maximum Safe Operating Area
Typical Gate Charge Vs.
Gate-to-Source Voltage
Typical Capacitance Vs.
Drain-to-Source Voltage
Typical Source-Drain Diode
Forward Voltage
0.5
1.5
2.5
3.5
4.5
5.5
-VSD , Source-to-Drain Voltage (V)
0.1
1
10
100
1000
-S
)
VGS = 0V
TJ = 150°C
TJ = 25°C
1
10
100
-VDS, Drain-to-Source Voltage (V)
0
2000
4000
6000
8000
10000
12000
C
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
1
10
100
1000
-VDS , Drain-to-Source Voltage (V)
1
10
100
1000
-D
Tc = 25°C
Tj = 150°C
Single Pulse
1ms
10ms
OPERATION IN THIS AREA
LIMITED BY RDS(on)
1
00μ
s
0
20
40
60
80
100
120
140
160
QG, Total Gate Charge (nC)
0
4
8
12
16
-G
VDS= -48V
VDS= -30V
ID = -56A
FOR TEST CIRCUIT
SEE FIGURE 13
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