- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄377522 > IRHNJ57230 (International Rectifier) 200V, N-Channel Surface Mount Radiation Hardened Power MOSFET(200V,表貼型抗輻射功率N溝道MOS場(chǎng)效應(yīng)管) PDF資料下載
參數(shù)資料
| 型號(hào)： | IRHNJ57230 |
| 廠(chǎng)商： | International Rectifier |
| 英文描述： | 200V, N-Channel Surface Mount Radiation Hardened Power MOSFET(200V,表貼型抗輻射功率N溝道MOS場(chǎng)效應(yīng)管) |
| 中文描述： | 為200V，N溝道表面安裝抗輻射功率MOSFET（200V的電壓，表貼型抗輻射功率?溝道馬鞍山場(chǎng)效應(yīng)管） |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大小： | 119K |
| 代理商： | IRHNJ57230 |
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
13
8.2
52
75
0.6
±20
60
13
7.5
4.4
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 ( for 5s )
1.0 ( Typical )
g
Pre-Irradiation
International Rectifier’s R5
TM
technology provides
high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
2
)). The combination
of low Rdson and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.
o
C
A
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-0.5)
IRHNJ57230
200V, N-CHANNEL
TECHNOLOGY
R
5
10/22/99
www.irf.com
1
Product Summary
Part Number Radiation Level R
DS(on)
IRHNJ57230 100K Rads (Si) 0.20
IRHNJ53230 300K Rads (Si) 0.20
IRHNJ54230 600K Rads (Si) 0.20
IRHNJ58230 1000K Rads (Si) 0.25
I
D
13A
13A
13A
13A
Features:
n
Single Event Effect (SEE) Hardened
n
Ultra low R
DS(on)
n
Low Total Gate Charge
n
Proton Tolerant
n
Simple Drive Requirements
n
Ease of Paralleling
n
Hermetically Sealed
n
Surface Mount
n
Ceramic Package
n
Light Weight
For footnotes refer to the last page
SMD-0.5
PD - 93753
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRHNJ63130 | 100V, N-CHANNEL |
| IRHNJ67130 | 100V, N-CHANNEL |
| IRHQ53110 | 30V N-Channel PowerTrench MOSFET |
| IRHQ57110 | 30V N-Channel PowerTrench MOSFET |
| IRHQ58110 | 30V N-Channel PowerTrench MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRHNJ57230SE | 制造商:International Rectifier 功能描述:N CH MOSFET 200V .22OHM 12A MAX - Rail/Tube |
| IRHNJ57234SE | 制造商:International Rectifier 功能描述:MOSFET, HIREL, SEE HARD, R5 - Bulk |
| IRHNJ57Z30 | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 30V 22A 3SMD-0.5 - Bulk |
| IRHNJ57Z30B | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 30V 22A 3-PIN SMD-0.5 - Rail/Tube |
| IRHNJ57Z30SCS | 制造商:International Rectifier 功能描述:IRHNJ57Z30SCS - Bulk |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。