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參數(shù)資料
| 型號(hào)： | IRHQ9110 |
| 廠商： | International Rectifier |
| 英文描述： | 100V, 4 P-Channel Surface Mount Radiation Hardened Power MOSFET(100V,表貼型抗輻射功率四P溝道MOS場(chǎng)效應(yīng)管) |
| 中文描述： | 100V的，4個(gè)P -通道表面安裝抗輻射功率MOSFET（100V的，表貼型抗輻射功率四馬鞍山P溝道場(chǎng)效應(yīng)管） |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大小： | 117K |
| 代理商： | IRHQ9110 |
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy 75
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
-2.3
-1.5
-9.2
12
0.1
±20
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-2.3
1.2
9.0
-55 to 150
300 (for 5s)
0.89 (Typical)
g
Pre-Irradiation
International Rectifier’s RAD-Hard
TM
HEXFET
MOSFET
technology provides high performance power MOSFETs
for space applications. This technology has over a de-
cade of proven performance and reliability in satellite ap-
plications. These devices have been characterized for
both Total Dose and Single Event Effects (SEE). The com-
bination of low R
DS(on)
and low gate charge reduces the
power losses in switching applications such as DC to DC
converters and motor control. These devices retain all of
the well established advantages of MOSFETs such as
voltage control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
o
C
A
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (LCC-28)
3/8/00
www.irf.com
1
Features:
n
Single Event Effect (SEE) Hardened
n
Low R
DS(on)
n
Low Total Gate Charge
n
Proton Tolerant
n
Simple Drive Requirements
n
Ease of Paralleling
n
Hermetically Sealed
n
Ceramic Package
n
Surface Mount
n
Light Weight
For footnotes refer to the last page
LCC-28
Product Summary
Part Number Radiation Level R
DS(on)
IRHQ9110 100K Rads (Si) 1.1
IRHQ93110 300K Rads (Si) 1.1
I
D
-2.3A
-2.3A
IRHQ9110
100V, 4P-CHANNEL
RAD-Hard
MOSFET TECHNOLOGY
HEXFET
PD - 93794
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